Invention Grant
- Patent Title: Air-spacer MOS transistor
- Patent Title (中): 空气隔离MOS晶体管
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Application No.: US14169913Application Date: 2014-01-31
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Publication No.: US09117805B2Publication Date: 2015-08-25
- Inventor: Heimanu Niebojewski , Yves Morand , Cyrille Le Royer
- Applicant: STMicroelectronics S.A. , STMicroelectronics (Crolles 2) SAS , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Applicant Address: FR Montrouge FR Crolles FR Paris
- Assignee: STMicroelectronics SA,STMicroelectronics (Crolles 2) SAS,Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: STMicroelectronics SA,STMicroelectronics (Crolles 2) SAS,Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Montrouge FR Crolles FR Paris
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1350941 20130204
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L29/49 ; H01L29/423
Abstract:
A MOS transistor including, above a gate insulator, a conductive gate stack having a height, a length, and a width, this stack having a lower portion close to the gate insulator and an upper portion, wherein the stack has a first length in its lower portion, and a second length shorter than the first length in its upper portion.
Public/Granted literature
- US20140217520A1 AIR-SPACER MOS TRANSISTOR Public/Granted day:2014-08-07
Information query
IPC分类:
