发明授权
- 专利标题: Compositions and processes for photolithography
- 专利标题(中): 光刻的组成和工艺
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申请号: US13445442申请日: 2012-04-12
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公开(公告)号: US09122159B2公开(公告)日: 2015-09-01
- 发明人: Deyan Wang , Chunyi Wu
- 申请人: Deyan Wang , Chunyi Wu
- 专利权人: Rohm and Haas Electronic Materials LLC
- 当前专利权人: Rohm and Haas Electronic Materials LLC
- 主分类号: G03F7/11
- IPC分类号: G03F7/11 ; G03F7/004 ; G03F7/20
摘要:
Topcoat layer compositions suitable for use in forming a topcoat layer over a layer of photoresist include: a matrix polymer which is aqueous alkali soluble; a first additive of mer which is aqueous alkali soluble and comprises polymerized units of a monomer of the following general formula (I): wherein: R1 is hydrogen or a C1 to C6 alkyl or fluoroalkyl group; R2 is a C3 to C8 branched alkylene group; and R3 is a C1 to C4 fluoroalkyl group; and wherein the first additive polymer is present in the composition in an amount less than the matrix polymer, and the first additive polymer has a lower surface energy than a surface energy of the matrix polymer; wherein a layer of the topcoat composition in a dried state has a water receding contact angle of from 75 to 85°. The compositions find particular applicability to immersion lithography processing.
公开/授权文献
- US20120264053A1 COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY 公开/授权日:2012-10-18
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