Invention Grant
- Patent Title: Low latency synchronization scheme for mesochronous DDR system
- Patent Title (中): 用于中间同步DDR系统的低延迟同步方案
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Application No.: US13902705Application Date: 2013-05-24
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Publication No.: US09123408B2Publication Date: 2015-09-01
- Inventor: Edwin Jose , Michael Drop , Xuhao Huang , Raghu Sankuratri , Deepti Sriramagiri , Marzio Pedrali-Noy
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G06F13/16 ; G11C7/10 ; G11C11/4093

Abstract:
In one embodiment, a memory interface comprises a cleanup phase-locked loop (PLL) configured to receive a reference clock signal, and to generate a clean clock signal based on the reference clock signal. The memory interface also comprises a synchronization circuit configured to receive data, a data clock signal, and the clean clock signal, wherein the synchronization circuit is further configured to sample the data using the data clock signal, and to synchronize the sampled data with the clean clock signal.
Public/Granted literature
- US20140347941A1 LOW LATENCY SYNCHRONIZATION SCHEME FOR MESOCHRONOUS DDR SYSTEM Public/Granted day:2014-11-27
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