Invention Grant
US09123408B2 Low latency synchronization scheme for mesochronous DDR system 有权
用于中间同步DDR系统的低延迟同步方案

Low latency synchronization scheme for mesochronous DDR system
Abstract:
In one embodiment, a memory interface comprises a cleanup phase-locked loop (PLL) configured to receive a reference clock signal, and to generate a clean clock signal based on the reference clock signal. The memory interface also comprises a synchronization circuit configured to receive data, a data clock signal, and the clean clock signal, wherein the synchronization circuit is further configured to sample the data using the data clock signal, and to synchronize the sampled data with the clean clock signal.
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