Invention Grant
US09123413B2 Method for managing the operation of a memory device having a SRAM memory plane and a non volatile memory plane, and corresponding memory device
有权
用于管理具有SRAM存储器平面和非易失性存储器平面的存储器件的操作的方法以及相应的存储器件
- Patent Title: Method for managing the operation of a memory device having a SRAM memory plane and a non volatile memory plane, and corresponding memory device
- Patent Title (中): 用于管理具有SRAM存储器平面和非易失性存储器平面的存储器件的操作的方法以及相应的存储器件
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Application No.: US14315401Application Date: 2014-06-26
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Publication No.: US09123413B2Publication Date: 2015-09-01
- Inventor: François Tailliet , Marc Battista
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater & Matsil, L.L.P.
- Priority: FR1356720 20130709
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C14/00 ; G11C7/10 ; G11C16/04 ; G11C16/34

Abstract:
A method can be used for managing the operation of a memory cell that includes an SRAM elementary memory cell and a non-volatile elementary memory cell coupled to one another. A data bit is transferred between the SRAM elementary memory cell and the non-volatile elementary memory cell. A control datum is stored in a control memory cell that is functionally analogous to and associated with the memory cell. The data bit is read from the SRAM elementary memory cell and a corresponding read of the control datum is performed. The data bit read from the SRAM elementary memory cell is inverted if the control datum has a first value but the data bit read from the SRAM elementary memory cell is not inverted if the control datum has a second value.
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