发明授权
- 专利标题： Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
- 专利标题（中）： 半导体基板的再加工方法，再加工半导体基板的制造方法以及SOI基板的制造方法
-
申请号： US13523011申请日： 2012-06-14
-
公开(公告)号： US09123529B2公开(公告)日： 2015-09-01
- 发明人: Kazuya Hanaoka , Shunsuke Kimura
- 申请人： Kazuya Hanaoka , Shunsuke Kimura
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2011-137283 20110621
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/02 ; H01L21/306 ; H01L21/3105 ; H01L21/311 ; H01L21/762
摘要：
A method suitable to reprocess a semiconductor substrate is provided. A semiconductor substrate in which a projection including a damaged semiconductor region and an insulating layer is provided in a peripheral portion of the semiconductor substrate is subjected to etching treatment for removing the insulating layer and to etching treatment for removing the damaged semiconductor region selectively with a non-damaged semiconductor region left using a mixed solution including nitric acid, a substance dissolving a semiconductor material included in the semiconductor substrate and oxidized by the nitric acid, a substance controlling a speed of oxidation of the semiconductor material and a speed of dissolution of the oxidized semiconductor material, and nitrous acid, in which the concentration of the nitrous acid is higher than or equal to 10 mg/l and lower than or equal to 1000 mg/l. Through these steps, the semiconductor substrate is reprocessed.
公开/授权文献
信息查询
IPC分类:
