Invention Grant
US09123651B2 Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
有权
等离子体处理室的密集氧化物涂层组件及其制造方法
- Patent Title: Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
- Patent Title (中): 等离子体处理室的密集氧化物涂层组件及其制造方法
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Application No.: US13851605Application Date: 2013-03-27
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Publication No.: US09123651B2Publication Date: 2015-09-01
- Inventor: Hong Shih , Lin Xu , John Michael Kerns , William Charles , John Daugherty , Sivakami Ramanathan , Russell Ormond , Robert G. O'Neill , Tom Stevenson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Agency: Buchanan, Ingersoll & Rooney PC
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/02 ; C25D11/02 ; C23C16/44
Abstract:
A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
Public/Granted literature
- US20140295670A1 DENSE OXIDE COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2014-10-02
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