公开(公告)号：US11384430B2

公开(公告)日：2022-07-12

申请号：US17255635

申请日：2019-07-01

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  Xiaomin Bin ,  Duane Outka ,  Eric A. Pape ,  Gregory A. Pilgrim ,  Girish M. Hundi ,  Cliff La Croix

IPC: C23C16/44 ,  H01J37/32

Abstract: A method for conditioning ceramic coating on a part for use in a plasma processing chamber is provided. The ceramic coating is wetted with a solution, wherein the solution is formed by mixing a solvent with an electrolyte, wherein from 1% to 10% of the electrolyte dissociates in the solution. The ceramic coating is blasted with particles. The ceramic coating is rinsed.

公开(公告)号：US11124659B2

公开(公告)日：2021-09-21

申请号：US15883787

申请日：2018-01-30

Applicant: Lam Research Corporation

Inventor： Amir A. Yasseri ,  Duane Outka ,  Hong Shih ,  John Daugherty

IPC: B05D1/32 ,  C09D5/00 ,  C09D1/00 ,  C01G25/02 ,  C23C4/02 ,  C23C4/12 ,  C23C4/01 ,  C01F7/02 ,  C23C4/18 ,  C23C4/10 ,  C23C4/11

Abstract: A method for providing a part with a plasma resistant ceramic coating for use in a plasma processing chamber is provided. A patterned mask is placed on the part. A film is deposited over the part. The patterned mask is removed. A plasma resistant ceramic coating is applied on the part.

公开(公告)号：US09947558B2

公开(公告)日：2018-04-17

申请号：US15235660

申请日：2016-08-12

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Robin Koshy ,  John Daugherty ,  Satish Srinivasan

IPC: H01L21/31 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/67069 ,  H01L21/02123 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67086 ,  H01L21/6831

Abstract: A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.

公开(公告)号：US09393666B2

公开(公告)日：2016-07-19

申请号：US14137049

申请日：2013-12-20

Applicant: Lam Research Corporation

Inventor： Catherine Zhou ,  Duane Outka ,  Cliff LaCroix ,  Hong Shih

IPC: B24B41/06 ,  H01J37/32

CPC classification number: B24B41/06 ,  H01J37/3288

Abstract: An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof. The support surface having a first set of holes configured to receive pins engaged in an upper surface of the inner electrode, a second set of holes configured to receive pins surrounding an outer periphery of the inner electrode, a third set of holes configured to receive pins engaged in an upper surface of the outer electrode, and a fourth set of holes configured to receive pins surrounding an outer periphery of the outer electrode.

Abstract translation: 公开了一种适配器板，其构造成可附接到用于从等离子体处理室清洁上部电极的清洁单元的通用压板上，所述适配器板包括支撑表面和安装表面，所述安装表面被构造成紧固到所述清洁单元的通用压板 。 支撑表面被配置为支撑用于清洁其上表面或下表面的喷头电极组件的内电极或外电极。 所述支撑表面具有第一组孔，所述第一组孔用于接纳接合在所述内部电极的上表面中的销;第二组孔，被配置为接纳围绕所述内部电极的外周的引脚;第三组孔， 接合外电极的上表面，以及第四组孔，其构造成接收围绕外电极的外周的引脚。

公开(公告)号：US09120201B2

公开(公告)日：2015-09-01

申请号：US14021300

申请日：2013-09-09

Applicant: Lam Research Corporation

Inventor： Armen Avoyan ,  Duane Outka ,  Catherine Zhou ,  Hong Shih

IPC: B24B41/06 ,  B08B3/08 ,  B08B3/12 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00

CPC classification number: B24B41/06 ,  B08B3/08 ,  B08B3/12 ,  C11D7/08 ,  C11D7/261 ,  C11D7/265 ,  C11D11/0047

Abstract: A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen secured to the polishing, which can comprise a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts and mount receptacles can be configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The silicon electrode can be polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode. Additional embodiments are contemplated, disclosed and claimed.

Abstract translation: 提供了一种利用抛光转盘和固定到抛光的双功能电极压板来抛光硅电极的工艺，其可以包括布置成从双功能电极压板的电极接合面突出的多个电极安装件。 电极安装座和安装座可构造为允许电极台板的电极接合面和硅电极的台板接合面的非破坏性接合和分离。 可以通过（i）通过电极座和安装座接合电极台板的电极接合面和硅电极的台板接合面，（ii）利用抛光转台来旋转，并（iii） ）使硅电极的暴露面与作为硅电极的抛光表面接触。 预期，公开和要求保护附加实施例。

公开(公告)号：US20150187615A1

公开(公告)日：2015-07-02

申请号：US14578979

申请日：2014-12-22

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Anthony Amadio ,  Tom Stevenson ,  Lin Xu ,  John Michael Kerns ,  Robert Griffith O'Neill ,  Sonia Castillo

IPC: H01L21/67 ,  H01L21/02 ,  C25D11/02 ,  H01L21/3065 ,  C23C24/04 ,  C23C22/73

CPC classification number: H01L21/02274 ,  C23C16/4404 ,  C23C16/50 ,  C23C24/04 ,  C25D11/04 ,  C25D11/38 ,  H01J37/321 ,  H01J37/32669

Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

Abstract translation: 用于处理半导体部件的半导体等离子体处理装置包括等离子体处理室，与等离子体处理室流体连通的处理气体源，用于将处理气体供应到等离子体处理室中; RF能量源，其适于将工艺气体激励成 等离子体处理室中的等离子体状态，以及用于从等离子体处理室排出处理气体的真空端口。 半导体等离子体处理装置还包括至少一种组分，其中组分具有约70,000或更大的相对磁导率的本体和在体表面上的冷喷涂的导电和非磁性涂层，其中涂层具有更大的厚度 比在等离子体处理期间配置为流过其中的RF电流的趋肤深度。

公开(公告)号：US12129569B2

公开(公告)日：2024-10-29

申请号：US17795509

申请日：2021-02-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  David Joseph Wetzel ,  John Daugherty ,  Hong Shih ,  Satish Srinivasan ,  Yuanping Song ,  Johnny Pham ,  Yiwei Song ,  Christopher Kimball

IPC: C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32 ,  H01L21/683

CPC classification number: C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12667 ,  Y10T428/12806

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.

公开(公告)号：US09546432B2

公开(公告)日：2017-01-17

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: C25D11/04 ,  C25D11/02 ,  H01L21/3065 ,  H01L21/02 ,  C25D11/16 ,  C25D11/12 ,  C23C28/00 ,  C23C24/00 ,  H01L21/67 ,  C23C16/44 ,  H01L21/78

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US20150184296A1

公开(公告)日：2015-07-02

申请号：US14572087

申请日：2014-12-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC: C23C16/455 ,  C23C16/46 ,  H01L21/67 ,  C23C16/52

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

Abstract translation: 一种用于在半导体衬底处理设备的真空室的流体处理部件的内部流体润湿表面上形成原子层沉积（ALD）或分子层沉积（MLD）阻挡涂层的涂层系统。 涂层系统包括流体处理部件，其中内部流体润湿表面限定涂层系统的工艺区域，与部件的工艺区域流体连通的气体供应系统，其中气体供应系统将工艺气体提供给过程区域 的组件通过其入口使得可以在流体处理组件的流体润湿表面上形成ALD或MLD阻挡涂层，以及与组件的处理区域流体连通的排气系统，其中排气系统排出 从组件的工艺区域通过其出口处理气体。

公开(公告)号：US20150179416A1

公开(公告)日：2015-06-25

申请号：US14137049

申请日：2013-12-20

Applicant: Lam Research Corporation

Inventor： Catherine Zhou ,  Duane Outka ,  Cliff LaCroix ,  Hong Shih

IPC: H01J37/32 ,  B24B41/06

CPC classification number: B24B41/06 ,  H01J37/3288

Abstract: An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof. The support surface having a first set of holes configured to receive pins engaged in an upper surface of the inner electrode, a second set of holes configured to receive pins surrounding an outer periphery of the inner electrode, a third set of holes configured to receive pins engaged in an upper surface of the outer electrode, and a fourth set of holes configured to receive pins surrounding an outer periphery of the outer electrode.

Abstract translation: 公开了一种适配器板，其构造成可附接到用于从等离子体处理室清洁上部电极的清洁单元的通用压板上，所述适配器板包括支撑表面和安装表面，所述安装表面被构造成紧固到所述清洁单元的通用压板 。 支撑表面被配置为支撑用于清洁其上表面或下表面的喷头电极组件的内电极或外电极。 所述支撑表面具有第一组孔，所述第一组孔用于接纳接合在所述内部电极的上表面中的销;第二组孔，被配置为接纳围绕所述内部电极的外周的引脚;第三组孔， 接合外电极的上表面，以及第四组孔，其构造成接收围绕外电极的外周的引脚。