Invention Grant
- Patent Title: Semiconductor device having fuse pattern
- Patent Title (中): 具有熔丝图形的半导体器件
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Application No.: US14088654Application Date: 2013-11-25
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Publication No.: US09123725B2Publication Date: 2015-09-01
- Inventor: Moon-Gi Cho , Eun-Chul Ahn , Sang-Young Kim , Joo-Weon Shin , Min-Ho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2012-0139675 20121204
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L23/525 ; G06F12/02

Abstract:
A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.
Public/Granted literature
- US20140151845A1 SEMICONDUCTOR DEVICE HAVING FUSE PATTERN Public/Granted day:2014-06-05
Information query
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