公开(公告)号：US09449918B2

公开(公告)日：2016-09-20

申请号：US14798474

申请日：2015-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Gi Cho ,  Eun-Chul Ahn ,  Sang-Young Kim ,  Joo-Weon Shin ,  Min-Ho Lee

IPC: H01L29/00 ,  H01L23/525 ,  H01L27/112 ,  H01L23/532 ,  G06F12/02

CPC classification number: H01L23/5256 ,  G06F12/0246 ,  H01L23/5329 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.

公开(公告)号：US09123725B2

公开(公告)日：2015-09-01

申请号：US14088654

申请日：2013-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Gi Cho ,  Eun-Chul Ahn ,  Sang-Young Kim ,  Joo-Weon Shin ,  Min-Ho Lee

IPC: H01L29/80 ,  H01L23/525 ,  G06F12/02

CPC classification number: H01L23/5256 ,  G06F12/0246 ,  H01L23/5329 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.

Abstract translation: 半导体器件通过防止通过修复过程的熔断体被电化学迁移电连接而提高了可靠性。 半导体器件包括衬底，熔丝，其包括形成在衬底上相同电平处的第一熔丝图案和第二熔丝图案，第一熔丝图案和第二熔丝图案彼此间隔开第一宽度，使得间隙 在所述保险丝设置在所述第一熔丝图案和所述第二熔丝图案之间的第一位置处，以及形成在所述第一熔丝图案和所述第二熔丝图案上的第一绝缘层，所述第一绝缘层包括位于所述第一位置上方的开口，并且具有 第二宽度小于第一宽度。