Invention Grant
- Patent Title: Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet head
- Patent Title (中): 功能元件的制造方法,铁电体层的制造方法,场效晶体管的制造方法,薄膜晶体管,场效应晶体管和压电喷墨头
-
Application No.: US14531723Application Date: 2014-11-03
-
Publication No.: US09123752B2Publication Date: 2015-09-01
- Inventor: Tatsuya Shimoda , Eisuke Tokumitsu , Takaaki Miyasako , Toshihiko Kaneda
- Applicant: Japan Science and Technology Agency
- Applicant Address: JP Saitama
- Assignee: Japan Science and Technology Agency
- Current Assignee: Japan Science and Technology Agency
- Current Assignee Address: JP Saitama
- Agency: Seed IP Law Group PLLC
- Priority: JP2010-107764 20100507; JP2010-107768 20100507; JP2010-118857 20100524
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; B41J2/16 ; C23C18/12 ; B05D5/06 ; H01L21/02 ; H01L21/368 ; H01L29/786 ; H01L41/33 ; H01L41/318 ; H01L27/12 ; C23C18/06 ; H01L21/441 ; H01L41/09

Abstract:
A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.
Public/Granted literature
Information query
IPC分类: