Invention Grant
- Patent Title: Semiconductor light-emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US14072359Application Date: 2013-11-05
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Publication No.: US09123864B2Publication Date: 2015-09-01
- Inventor: Masakatsu Tomonari , Toshiaki Ogawa , Shunsuke Minato
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi, Tokushima
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi, Tokushima
- Agency: Squire Patton Boggs (US) LLP
- Priority: JP2012-244509 20121106
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L29/267 ; H01L27/14 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L33/38 ; H01L21/02 ; H01L21/768 ; H01L21/28 ; H01L23/532 ; H01L23/28 ; H01L23/00 ; H01L33/42 ; H01L33/44

Abstract:
A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film.The semiconductor light-emitting element includes a semiconductor structure having an n-type semiconductor layer and a p-type semiconductor layer. A transparent conductive film is disposed on the p-type semiconductor layer. An insulation film is disposed on the transparent conductive film. A p-side electrode layer is disposed on the insulation film. A protection film is disposed over the insulation film, and the protection film covers part of the p-side electrode layer.
Public/Granted literature
- US20140124821A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT Public/Granted day:2014-05-08
Information query
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