公开(公告)号：US09923120B2

公开(公告)日：2018-03-20

申请号：US15273713

申请日：2016-09-23

Applicant: NICHIA CORPORATION

Inventor： Shunsuke Minato

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/32 ,  H01L33/44

CPC classification number: H01L33/382 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A method of producing a semiconductor light emitting element includes providing a semiconductor stack including a first semiconductor layer, an active layer, a second semiconductor layer, and a first insulating layer. An upper surface of the first insulating layer is partially covered with a mask. The semiconductor stack is etched to expose the first semiconductor layer in a region not covered by the mask. The mask is removed. A second insulating layer covering from the upper surface of the first insulating layer to an exposed region of the first semiconductor layer is provided. The second insulating layer is etched without masking to remove at least a portion of the second insulating layer covering the exposed region to expose the exposed region. A first conducting layer covering from the exposed region of the first semiconductor layer to a region above the upper surface of the first insulating layer is provided.

公开(公告)号：US12145349B2

公开(公告)日：2024-11-19

申请号：US17197606

申请日：2021-03-10

Applicant: NICHIA CORPORATION

Inventor： Daisuke Sanga ,  Masatsugu Ichikawa ,  Shunsuke Minato ,  Toru Takasone ,  Masahiko Sano

IPC: H01L33/00 ,  B32B37/02 ,  B32B38/00 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

公开(公告)号：US11257996B2

公开(公告)日：2022-02-22

申请号：US16695511

申请日：2019-11-26

Applicant: NICHIA CORPORATION

Inventor： Shunsuke Minato ,  Masahiko Sano

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L33/44 ,  H01L33/54 ,  H01L33/56 ,  H01L25/075

Abstract: A light emitting apparatus includes: a mount substrate; a first light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the first light emitting device via an adhesive material, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the first light emitting device, and wherein a first lateral surface of the light transparent member is located laterally inward of a lateral surface of the first light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

公开(公告)号：US10522727B2

公开(公告)日：2019-12-31

申请号：US15811622

申请日：2017-11-13

Applicant: NICHIA CORPORATION

Inventor： Shunsuke Minato ,  Masahiko Sano

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L33/44 ,  H01L33/54 ,  H01L33/56 ,  H01L25/075

Abstract: A light emitting apparatus includes a mount substrate; two or more light emitting devices mounted on the mount substrate such that adjacent light emitting devices face each other at lateral surfaces thereof; a light transparent member positioned on upper surfaces of the light emitting devices, the light transparent member having a plate shape and being positioned to receive incident light emitted from the light emitting devices; and a covering member. In a plan view, the light transparent member is larger than each of the light emitting devices. The covering member contains a light reflective material and covers at least a lateral surface of the light transparent member.

公开(公告)号：US09123864B2

公开(公告)日：2015-09-01

申请号：US14072359

申请日：2013-11-05

Applicant: NICHIA CORPORATION

Inventor： Masakatsu Tomonari ,  Toshiaki Ogawa ,  Shunsuke Minato

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/267 ,  H01L27/14 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L33/38 ,  H01L21/02 ,  H01L21/768 ,  H01L21/28 ,  H01L23/532 ,  H01L23/28 ,  H01L23/00 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28247 ,  H01L21/76841 ,  H01L23/28 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L24/26 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/022 ,  H01L2224/8092 ,  H01L2924/01322 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film.The semiconductor light-emitting element includes a semiconductor structure having an n-type semiconductor layer and a p-type semiconductor layer. A transparent conductive film is disposed on the p-type semiconductor layer. An insulation film is disposed on the transparent conductive film. A p-side electrode layer is disposed on the insulation film. A protection film is disposed over the insulation film, and the protection film covers part of the p-side electrode layer.

Abstract translation: 能够提高电极和保护膜之间的粘合强度的半导体发光元件。 半导体发光元件包括具有n型半导体层和p型半导体层的半导体结构。 透明导电膜设置在p型半导体层上。 绝缘膜设置在透明导电膜上。 p侧电极层设置在绝缘膜上。 保护膜设置在绝缘膜上，保护膜覆盖p侧电极层的一部分。

公开(公告)号：US10603889B2

公开(公告)日：2020-03-31

申请号：US15883810

申请日：2018-01-30

Applicant: NICHIA CORPORATION

Inventor： Daisuke Sanga ,  Masatsugu Ichikawa ,  Shunsuke Minato ,  Toru Takasone ,  Masahiko Sano

IPC: F21V21/00 ,  B32B38/00 ,  B32B37/02 ,  H01L33/00 ,  H01L33/58 ,  H01L33/60

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

公开(公告)号：US09293674B2

公开(公告)日：2016-03-22

申请号：US14176375

申请日：2014-02-10

Applicant: NICHIA CORPORATION ,  CITIZEN ELECTRONICS CO., LTD. ,  CITIZEN HOLDINGS CO., LTD.

Inventor： Takeshi Kususe ,  Toshiaki Ogawa ,  Shunsuke Minato ,  Nodoka Oyamada

IPC: H01L33/62 ,  H01L33/50 ,  H01L33/38 ,  H01L33/54 ,  H01L23/00 ,  H01L33/46

CPC classification number: H01L33/62 ,  H01L24/96 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/505 ,  H01L33/54 ,  H01L2224/04105 ,  H01L2924/12036 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00

Abstract: A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.

Abstract translation: 半导体器件具有发光元件和树脂层; 发光元件包括依次层叠有第一半导体层和第二半导体层的半导体层叠体，在形成第二半导体层的上表面的第二半导体层的上表面上连接到第二半导体层的第二电极 半导体层叠体以及在第一半导体层的上表面与第一半导体层连接的第一电极，其中半导体层叠体的一个表面上的第二半导体层的一部分被去除，并且第一半导体层的一部分 被暴露 并且所述树脂层被构造成覆盖所述发光元件的至少一个侧表面，并且所述树脂层的上表面低于所述半导体层叠体的上表面。

公开(公告)号：US08980661B2

公开(公告)日：2015-03-17

申请号：US14263695

申请日：2014-04-28

Applicant: Nichia Corporation

Inventor： Masatsugu Ichikawa ,  Masahiko Sano ,  Daisuke Sanga ,  Toru Takasone ,  Shunsuke Minato

IPC: H01L21/00 ,  H01L33/50 ,  H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/505 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: Provided is a method for manufacturing a light emitting device comprising a light emitting element and an optical part, the method comprising the steps of (i) forming a hydroxyl film on a bonding surface of each of the light emitting element and the optical part by an atomic layer deposition, and (ii) bonding the bonding surfaces of the light emitting element and the optical part with each other, each of the bonding surfaces having the hydroxyl film formed thereon, wherein a substep is repeated at least one time in the step (i), in which substep a first raw material gas and a second raw material gas are sequentially supplied onto the bonding surfaces of the light emitting element and the optical part, and wherein the bonding of the bonding surfaces in the step (ii) is performed without a heating treatment.

Abstract translation: 提供一种制造包括发光元件和光学部件的发光器件的方法，所述方法包括以下步骤：（i）在每个发光元件和光学部件的接合表面上形成羟基膜， 原子层沉积，和（ii）将发光元件和光学部件的结合面彼此粘合，每个接合表面上形成有羟基膜，其中子步骤在该步骤中重复至少一次（ i），其中第一原料气体和第二原料气体顺序地供应到发光元件和光学部件的接合表面上，并且其中执行步骤（ii）中的接合表面的接合 没有加热处理。

公开(公告)号：US08790945B2

公开(公告)日：2014-07-29

申请号：US13630809

申请日：2012-09-28

Applicant: Nichia Corporation

Inventor： Kentaro Watanabe ,  Shunsuke Minato ,  Giichi Marutsuki

IPC: H01L33/00

CPC classification number: H01L21/28017 ,  H01L21/6835 ,  H01L21/743 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L2221/6835 ,  H01L2933/0016

Abstract: A nitride semiconductor device includes a silicon substrate, a nitride semiconductor layer formed on the silicon substrate, and metal electrodes formed in contact with the silicon substrate. The metal electrodes has first metal layers which are formed in a shape of discrete islands and in contact with the silicon substrate, and second metal layers which are in contact with the silicon substrate exposed among the islands of the first metal layers and are formed to cover the first metal layers. Further, the second metal layers are made of a metal capable of forming ohmic contact with silicon, and the first metal layers are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer.

Abstract translation: 氮化物半导体器件包括硅衬底，形成在硅衬底上的氮化物半导体层和与硅衬底接触形成的金属电极。 金属电极具有形成离散岛状并与硅衬底接触的第一金属层和与第一金属层的岛之间暴露的硅衬底接触的第二金属层，并形成为覆盖 第一层金属层。 此外，第二金属层由能够与硅形成欧姆接触的金属制成，第一金属层由含有金属和硅的合金制成，其中金属与第二金属层不同。

公开(公告)号：US12095007B2

公开(公告)日：2024-09-17

申请号：US17525230

申请日：2021-11-12

Applicant: NICHIA CORPORATION

Inventor： Hirofumi Nishiyama ,  Shunsuke Minato

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/32 ,  H01L33/0075 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light emitting element includes a first light emitting portion and a second light emitting portion. The first light emitting portion includes a first stacked body having a first n-type layer, a first active layer, a first p-type layer, a first tunnel junction layer, and a second n-type layer. The second light emitting portion includes a second stacked body having a third n-type layer, a second p-type layer, a second tunnel junction layer, a fourth n-type layer, a second active layer, a third p-type layer, and a transmissive conductive film. A resistivity of the second n-type layer is higher than a resistivity of the transmissive conductive film. A thickness of the second n-type layer is larger than a thickness of the transmissive conductive film.