Invention Grant
- Patent Title: Sputtering target with reverse erosion profile surface and sputtering system and method using the same
- Patent Title (中): 具有反侵蚀曲面和溅射系统的溅射靶及其使用方法
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Application No.: US13212217Application Date: 2011-08-18
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Publication No.: US09127356B2Publication Date: 2015-09-08
- Inventor: Chia-Liang Chueh , Kuo-Chou Chen , Ren-Dou Lee , Hsien-Liang Meng , Chun-Wei Lin
- Applicant: Chia-Liang Chueh , Kuo-Chou Chen , Ren-Dou Lee , Hsien-Liang Meng , Chun-Wei Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: C23C14/35
- IPC: C23C14/35 ; C23C14/34 ; H01J37/34

Abstract:
A sputtering target is provided that includes a planar backing plate and a target material formed over the planar backing plate and including an uneven sputtering surface including thick portions and thin portions and configured in conjunction with a sputtering apparatus such as a magnetron sputtering tool with a fixed magnet arrangement. The uneven surface is designed in conjunction with the magnetic fields that will be produced by the magnet arrangement such that the thicker target portions are positioned at locations where target erosion occurs at a high rate. Also provided is the magnetron sputtering system and a method for utilizing the target with uneven sputtering surface such that the thickness across the target to become more uniform in time as the target is used.
Public/Granted literature
- US20130043120A1 SPUTTERING TARGET WITH REVERSE EROSION PROFILE SURFACE AND SPUTTERING SYSTEM AND METHOD USING THE SAME Public/Granted day:2013-02-21
Information query
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