Invention Grant
- Patent Title: Emitter structure, gas ion source and focused ion beam system
- Patent Title (中): 发射体结构，气体离子源和聚焦离子束系统
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Application No.: US14224149Application Date: 2014-03-25
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Publication No.: US09129771B2Publication Date: 2015-09-08
- Inventor: Anto Yasaka , Yasuhiko Sugiyama , Hiroshi Oba
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2013-063707 20130326
- Main IPC: G21K5/04
- IPC: G21K5/04 ; H01J27/26 ; H01J37/08 ; H01J1/15 ; H01J1/18 ; H01J3/04
Abstract:
There is provided an emitter structure, a gas ion source including the emitter structure, and a focused ion beam system including the gas ion source. The emitter structure includes a pair of conductive pins which are fixed to a base member, a filament which is connected between the pair of conductive pins, and an emitter which is connected to the filament and has a sharp tip. A supporting member is fixed to the base material, and the emitter is connected to the supporting member.
Public/Granted literature
- US20140291542A1 EMITTER STRUCTURE, GAS ION SOURCE AND FOCUSED ION BEAM SYSTEM Public/Granted day:2014-10-02
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