Invention Grant
US09129878B2 Mechanisms for forming backside illuminated image sensor device structure
有权
形成背面照明图像传感器装置结构的机理
- Patent Title: Mechanisms for forming backside illuminated image sensor device structure
- Patent Title (中): 形成背面照明图像传感器装置结构的机理
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Application No.: US14029402Application Date: 2013-09-17
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Publication No.: US09129878B2Publication Date: 2015-09-08
- Inventor: Bo-Chang Su , Chih-Ho Tai , Wei-Chih Weng , Hsun-Ying Huang , Hsien-Liang Meng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146
Abstract:
Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The backside illuminated image sensor device structure includes a substrate having a frontside and a backside and a pixel array formed in the frontside of the substrate. The backside illuminated image sensor device structure further includes an antireflective layer formed over the backside of the substrate, and the antireflective layer is made of silicon carbide nitride.
Public/Granted literature
- US20150076638A1 MECHANISMS FOR FORMING BACKSIDE ILLUMINATED IMAGE SENSOR DEVICE STRUCTURE Public/Granted day:2015-03-19
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