公开(公告)号：US20220238572A1

公开(公告)日：2022-07-28

申请号：US17658704

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ming-Chi Wu ,  Chun-Chieh Fang ,  Bo-Chang Su ,  Chien Nan Tu ,  Yu-Lung Yeh ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L27/146 ,  H01L21/762 ,  H01L21/3205

Abstract: A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

公开(公告)号：US09543152B2

公开(公告)日：2017-01-10

申请号：US14322501

申请日：2014-07-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ching-Hung Huang ,  Bo-Chang Su ,  Chih-Ho Tai ,  Wen-Tsao Chen ,  Kuan-Chi Tsai

IPC: H01L49/02 ,  H01L21/263 ,  H01L21/311

CPC classification number: H01L21/263 ,  H01L21/02071 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  H01L28/60

Abstract: The semiconductor device includes a substrate, a bottom electrode, a capacitor dielectric layer, a top electrode, an etching stop layer, a first anti-reflective coating layer and a capping layer. The bottom electrode is on the substrate. The capacitor dielectric layer is on the bottom electrode. The capacitor dielectric layer has a first region and a second region adjacent to the first region. The top electrode is on the first region of the capacitor dielectric layer. The etching stop layer is on the top electrode. The first anti-reflective coating layer is on the etching stop layer, in which the first anti-reflective coating layer, the etching stop layer and the top electrode together have a sidewall. The capping layer overlies the sidewall, the etching stop layer, the second region of the capacitor dielectric layer, in which the capping layer is formed from oxide or nitride.

Abstract translation: 半导体器件包括衬底，底部电极，电容器电介质层，顶部电极，蚀刻停止层，第一抗反射涂层和覆盖层。 底部电极位于基板上。 电容器介质层位于底部电极上。 电容器介电层具有与第一区相邻的第一区和第二区。 顶部电极位于电容器介电层的第一区域上。 蚀刻停止层位于顶部电极上。 第一抗反射涂层位于蚀刻停止层上，其中第一抗反射涂层，蚀刻停止层和顶电极一起具有侧壁。 覆盖层覆盖侧壁，蚀刻停止层，电容器介电层的第二区域，其中覆盖层由氧化物或氮化物形成。

公开(公告)号：US09129878B2

公开(公告)日：2015-09-08

申请号：US14029402

申请日：2013-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Chang Su ,  Chih-Ho Tai ,  Wei-Chih Weng ,  Hsun-Ying Huang ,  Hsien-Liang Meng

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689

Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The backside illuminated image sensor device structure includes a substrate having a frontside and a backside and a pixel array formed in the frontside of the substrate. The backside illuminated image sensor device structure further includes an antireflective layer formed over the backside of the substrate, and the antireflective layer is made of silicon carbide nitride.

Abstract translation: 提供背面照明图像传感器装置结构的机构的实施例。 背面照明图像传感器装置结构包括具有前侧和背面的基板和形成在基板的前侧的像素阵列。 背面照明图像传感器装置结构还包括形成在基板的背面上的抗反射层，并且抗反射层由碳化硅氮化物制成。