Invention Grant
- Patent Title: In situ real-time wafer breakage detection
- Patent Title (中): 原位实时晶片断裂检测
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Application No.: US14049464Application Date: 2013-10-09
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Publication No.: US09129895B2Publication Date: 2015-09-08
- Inventor: Su-Hao Liu , Chien-Hung Lin , Wei-Han Huang , Zi-Wei Fang
- Applicant: Taiwan Semiconductor Manufacturing Co., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G08B17/00
- IPC: G08B17/00 ; H01L21/66

Abstract:
The disclosure provides a real-time wafer breakage detection method. The detection method includes the following operations. A wafer is positioned on a wafer holder of a process chamber in which a thermal process is being performed. Then, the temperature at the wafer holder is measured. And, a notification for corrective action is issued if the temperature is out of a predetermined alarm range.
Public/Granted literature
- US20150097676A1 In Situ Real-Time Wafer Breakage Detection Public/Granted day:2015-04-09
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