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    Photoresist removal method using residue gas analyzer
    3.
    发明授权
    Photoresist removal method using residue gas analyzer 有权

    公开(公告)号：US11020778B2

    公开(公告)日：2021-06-01

    申请号：US16503571

    申请日：2019-07-04

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Jen Hsiao ,  Ya-Ping Chen ,  Chien-Hung Lin ,  Wen-Pin Liu ,  Chin-Wen Chen

    IPC: H01L21/027 ,  B08B7/00 ,  G03F7/42 ,  H01J37/32

    Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.

    METHOD OF MAKING SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND RESULTING DEVICE
    4.
    发明申请
    METHOD OF MAKING SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND RESULTING DEVICE 审中-公开

    公开(公告)号：US20200259003A1

    公开(公告)日：2020-08-13

    申请号：US16861668

    申请日：2020-04-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chien-Hung Lin ,  Chun-Chieh Mo ,  Shih-Chi Kuo

    IPC: H01L29/66 ,  H01L29/423 ,  H01L27/11573 ,  H01L27/1157 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/06 ,  H01L29/792

    Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

    METHOD OF MAKING SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND RESULTING DEVICE
    5.
    发明申请
    METHOD OF MAKING SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND RESULTING DEVICE 审中-公开

    公开(公告)号：US20190165148A1

    公开(公告)日：2019-05-30

    申请号：US16032601

    申请日：2018-07-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chien-Hung Lin ,  Chun-Chieh Mo ,  Shih-Chi Kuo

    IPC: H01L29/66 ,  H01L29/792 ,  H01L27/1157 ,  H01L21/3213 ,  H01L21/311 ,  H01L29/06

    Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

    In Situ Real-Time Wafer Breakage Detection
    6.
    发明申请
    In Situ Real-Time Wafer Breakage Detection 有权
    原位实时晶片破损检测

    公开(公告)号：US20150097676A1

    公开(公告)日：2015-04-09

    申请号：US14049464

    申请日：2013-10-09

    Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

    Inventor： Su-Hao Liu ,  Chien-Hung Lin ,  Wei-Han Huang ,  Zi-Wei Fang

    IPC: H01L21/66 ,  G08B21/18

    CPC classification number: H01L22/26 ,  H01L21/67248 ,  H01L21/67288 ,  H01L22/12

    Abstract: The disclosure provides a real-time wafer breakage detection method. The detection method includes the following operations. A wafer is positioned on a wafer holder of a process chamber in which a thermal process is being performed. Then, the temperature at the wafer holder is measured. And, a notification for corrective action is issued if the temperature is out of a predetermined alarm range.

    Abstract translation: 本公开提供了一种实时晶片断裂检测方法。 检测方法包括以下操作。 晶片位于正在进行热处理的处理室的晶片保持器上。 然后，测量晶片架上的温度。 并且，如果温度超出预定的报警范围，则发出纠正措施的通知。

    METHOD OF MAKING SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND RESULTING DEVICE
    7.
    发明申请
    METHOD OF MAKING SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND RESULTING DEVICE 有权

    公开(公告)号：US20220352354A1

    公开(公告)日：2022-11-03

    申请号：US17865113

    申请日：2022-07-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chien-Hung Lin ,  Chun-Chieh Mo ,  Shih-Chi Kuo

    IPC: H01L29/66 ,  H01L29/792 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/311 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/423

    Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

    METHOD OF MAKING SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND RESULTING DEVICE
    8.
    发明申请
    METHOD OF MAKING SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND RESULTING DEVICE 有权

    公开(公告)号：US20210119024A1

    公开(公告)日：2021-04-22

    申请号：US17115831

    申请日：2020-12-09

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chien-Hung Lin ,  Chun-Chieh Mo ,  Shih-Chi Kuo

    IPC: H01L29/66 ,  H01L29/792 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/311 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/423

    Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

    Method of making semiconductor device comprising flash memory and resulting device
    10.
    发明授权
    Method of making semiconductor device comprising flash memory and resulting device 有权

    公开(公告)号：US11417753B2

    公开(公告)日：2022-08-16

    申请号：US17115831

    申请日：2020-12-09

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chien-Hung Lin ,  Chun-Chieh Mo ,  Shih-Chi Kuo

    IPC: H01L29/66 ,  H01L29/792 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/311 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/423

    Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

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