Invention Grant
US09130004B2 Heterojunction bipolar transistor, power amplifier including the same, and method for fabricating heterojunction bipolar transistor
有权
异质结双极晶体管，包括它的功率放大器，以及用于制造异质结双极晶体管的方法
- Patent Title: Heterojunction bipolar transistor, power amplifier including the same, and method for fabricating heterojunction bipolar transistor
- Patent Title (中): 异质结双极晶体管，包括它的功率放大器，以及用于制造异质结双极晶体管的方法
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Application No.: US14088510Application Date: 2013-11-25
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Publication No.: US09130004B2Publication Date: 2015-09-08
- Inventor: Isao Obu , Yasunari Umemoto , Atsushi Kurokawa
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2012-275894 20121218
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/66 ; H01L29/737 ; H01L21/8252 ; H01L27/06
Abstract:
A heterojunction bipolar transistor includes a ballast resistor layer of which resistance increases with an increase in temperature. The ballast resistor layer includes a first ballast resistor sub-layer having a positive temperature coefficient of resistivity in a first temperature range and a second temperature range and a second ballast resistor sub-layer having a negative temperature coefficient of resistivity in the first temperature range and a positive temperature coefficient of resistivity in the second temperature range.
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