Invention Grant
- Patent Title: Method for manufacturing solar cell and dopant layer thereof
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Application No.: US13840618Application Date: 2013-03-15
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Publication No.: US09130112B2Publication Date: 2015-09-08
- Inventor: Juhwa Cheong , Yongduk Jin , Youngsung Yang , Manhyo Ha
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2012-0067537 20120622
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0216 ; H01L31/0224
Abstract:
A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.
Public/Granted literature
- US09166096B2 Method for manufacturing solar cell and dopant layer thereof Public/Granted day:2015-10-20
Information query
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