公开(公告)号：US09608135B2

公开(公告)日：2017-03-28

申请号：US13644287

申请日：2012-10-04

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Juhwa Cheong

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

公开(公告)号：US20150144183A1

公开(公告)日：2015-05-28

申请号：US14555155

申请日：2014-11-26

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon CHOI ,  Hyunjung PARK

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L21/266 ,  H01L31/022441 ,  H01L31/03529 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is discussed. The solar cell according to an embodiment includes a semiconductor substrate, a first conductive type region and a second conductive type region disposed on the same side of the semiconductor substrate, wherein at least one of the first and second conductive type regions includes a main region and a boundary region disposed at a peripheral portion of the main region, and the boundary region has at least one of a varying doping concentration and a varying doping depth.

Abstract translation: 讨论太阳能电池。 根据实施例的太阳能电池包括半导体衬底，第一导电类型区域和设置在半导体衬底的同一侧上的第二导电类型区域，其中第一和第二导电类型区域中的至少一个包括主区域和 边界区域，设置在主区域的周边部分，并且边界区域具有改变的掺杂浓度和变化的掺杂深度中的至少一个。

公开(公告)号：US10910502B2

公开(公告)日：2021-02-02

申请号：US16242561

申请日：2019-01-08

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon Choi ,  Changseo Park ,  Hyungjin Kwon

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0745 ,  H01L31/0216

Abstract: A method for manufacturing a solar cell, the method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer includes depositing a semiconductor material; forming a capping layer on the semiconductor layer; and forming an electrode connected to the semiconductor layer, wherein the tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure, wherein a pressure of the forming of the semiconductor layer is smaller than the pressure of the forming of the tunneling layer, wherein the forming of the semiconductor layer further comprises doping the semiconductor layer with dopants, and wherein the capping layer is formed between the forming of the semiconductor layer and the forming of the electrode.

公开(公告)号：US09887314B2

公开(公告)日：2018-02-06

申请号：US15178274

申请日：2016-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Hyungjin Kwon ,  Chungyi Kim ,  Junghoon Choi

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/068 ,  H01L21/02

CPC classification number: H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

Abstract: Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

公开(公告)号：US10903375B2

公开(公告)日：2021-01-26

申请号：US16290233

申请日：2019-03-01

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yiyin Yu ,  Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Seongeun Lee

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/02

Abstract: A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.

公开(公告)号：US10243090B2

公开(公告)日：2019-03-26

申请号：US14734870

申请日：2015-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon Choi ,  Changseo Park ,  Hyungjin Kwon

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0745

Abstract: Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

公开(公告)号：US09166096B2

公开(公告)日：2015-10-20

申请号：US13840618

申请日：2013-03-15

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yongduk Jin ,  Youngsung Yang ,  Manhyo Ha

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/1864 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.

Abstract translation: 根据本发明实施例的用于制造太阳能电池的掺杂剂层的方法包括：将掺杂剂离子注入基板; 和用于激活掺杂剂的热处理。 在激活的热处理中，在第一气体气氛下，在比第一温度低的温度下形成防扩散膜之后，在第一温度下对基板进行热处理。

公开(公告)号：US10686087B2

公开(公告)日：2020-06-16

申请号：US15600042

申请日：2017-05-19

Applicant: LG ELECTRONICS INC.

Inventor： Chungyi Kim ,  Youngsung Yang ,  Jaewoo Choi ,  Mihee Heo

IPC: H01L31/0368 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/0216

Abstract: Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.

公开(公告)号：US10256364B2

公开(公告)日：2019-04-09

申请号：US15858016

申请日：2017-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Hyungjin Kwon ,  Chungyi Kim ,  Junghoon Choi

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/068 ,  H01L21/02

Abstract: A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.

公开(公告)号：US09356182B2

公开(公告)日：2016-05-31

申请号：US14555155

申请日：2014-11-26

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon Choi ,  Hyunjung Park

IPC: H01L29/66 ,  H01L31/18 ,  H01L31/0224 ,  H01L21/266 ,  H01L31/0747 ,  H01L31/0352

CPC classification number: H01L31/1804 ,  H01L21/266 ,  H01L31/022441 ,  H01L31/03529 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is discussed. The solar cell according to an embodiment includes a semiconductor substrate, a first conductive type region and a second conductive type region disposed on the same side of the semiconductor substrate, wherein at least one of the first and second conductive type regions includes a main region and a boundary region disposed at a peripheral portion of the main region, and the boundary region has at least one of a varying doping concentration and a varying doping depth.

Abstract translation: 讨论太阳能电池。 根据实施例的太阳能电池包括半导体衬底，第一导电类型区域和设置在半导体衬底的同一侧上的第二导电类型区域，其中第一和第二导电类型区域中的至少一个包括主区域和 边界区域，设置在主区域的周边部分，并且边界区域具有改变的掺杂浓度和变化的掺杂深度中的至少一个。