发明授权
- 专利标题: Magnetic memory and method for manufacturing the same
- 专利标题(中): 磁记忆及其制造方法
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申请号: US14201038申请日: 2014-03-07
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公开(公告)号: US09130143B2公开(公告)日: 2015-09-08
- 发明人: Toshihiko Nagase , Daisuke Watanabe , Kazuya Sawada , Koji Ueda , Youngmin Eeh , Hiroaki Yoda
- 申请人: Toshihiko Nagase , Daisuke Watanabe , Kazuya Sawada , Koji Ueda , Youngmin Eeh , Hiroaki Yoda
- 代理机构: Holtz, Holtz, Goodman & Chick PC
- 主分类号: G11C11/16
- IPC分类号: G11C11/16 ; H01L43/02 ; H01L43/12
摘要:
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier.
公开/授权文献
- US20150069553A1 MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME 公开/授权日:2015-03-12