Invention Grant
- Patent Title: Memory system having memory ranks and related tuning method
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Application No.: US14692797Application Date: 2015-04-22
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Publication No.: US09135981B2Publication Date: 2015-09-15
- Inventor: Eunsung Seo , Chul-Sung Park , Chi-Sung Oh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0103457 20120918
- Main IPC: G11C29/22
- IPC: G11C29/22 ; G11C11/4076 ; G11C17/16 ; G11C11/4093

Abstract:
A memory device comprises at least two memory ranks sharing input/output lines, at least one mode register configured to store bits used to tune delays of data signals of the at least two ranks output through the input/output lines, a controller configured to determine tuning parameters for the data signals based on the stored bits in the at least one mode register, the tuning parameters comprising at least the delays of the data signals, and at least one nonvolatile memory disposed in at least one of the at least two memory ranks and configured to store the tuning parameters.
Public/Granted literature
- US20150228327A1 MEMORY SYSTEM HAVING MEMORY RANKS AND RELATED TUNING METHOD Public/Granted day:2015-08-13
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