摘要:
A memory device comprises at least two memory ranks sharing input/output lines, at least one mode register configured to store bits used to tune delays of data signals of the at least two ranks output through the input/output lines, a controller configured to determine tuning parameters for the data signals based on the stored bits in the at least one mode register, the tuning parameters comprising at least the delays of the data signals, and at least one nonvolatile memory disposed in at least one of the at least two memory ranks and configured to store the tuning parameters.
摘要:
A system and method for effectuating a self-timed clock (STC) loop for memory access operations. In one embodiment, the method includes configuring a particular access margin value setting based on configuration data of at least one memory instance of a memory device; and applying the particular access margin value setting to a reference cell assembly associated with the at least one memory instance for facilitating generation of a self-timed clock signal that is optimized for the at least one memory instance.
摘要:
A shift register is clocked by propagating two clock networks in opposite directions: one from input towards the output, the other from the output towards the input. The parasitic delays at the end of these networks are picked to be approximately equal. An extra latch is added to the shift register where the two clock networks meet to prevent a race condition. Both clock networks consist of non-overlapping clocks. Non-overlapping clock generator circuits are used to restore the non-overlap of the clocks when parasitic effects start to cause clock overlap as the clocks are propagated over long distances. An extra latch in the shift register at the non-overlapping clock generators prevents the delay of the non-overlapping clock generator from causing a race condition.
摘要:
Apparatus is disclosed for quickly testing memory arrays of multiple recirculating loop memory elements and for locating faulty elements, if any, within designated subdivisions of said array. All loops are loaded with identical test bits. The loaded data is verified and faulty elements, if any, are located by means of a plurality of comparison AND gates. Each gate is connected to the output of a respective subdivision of the array elements and produces a first output signal when all such outputs are identical (on a serial bit-by-bit basis) and produces a second output signal when all said outputs are not identical. The output signals from the respective comparison AND gates are sensed in serial succession to locate the array subdivision containing any faulty elements.
摘要:
A memory device comprises at least two memory ranks sharing input/output lines, at least one mode register configured to store bits used to tune delays of data signals of the at least two ranks output through the input/output lines, a controller configured to determine tuning parameters for the data signals based on the stored bits in the at least one mode register, the tuning parameters comprising at least the delays of the data signals, and at least one nonvolatile memory disposed in at least one of the at least two memory ranks and configured to store the tuning parameters.
摘要:
A programmable Built In Self Test (pBIST) system used to test embedded memories where the memories under test are incorporated in a plurality of sub chips not integrated with the pBIST module. Test data comparison is performed in a distributed data logging architecture to minimize the number of interconnections between the distributed data loggers and the pBIST.
摘要:
In a method for testing a counter, the counter is first set at a predetermined initial value. Then, the counter is incremented in response to the clocks. The number of the clocks is counted until a carry is outputted from the counter to provide an actual counted value. The actual counted value is compared to a reference value, which is calculated in advance. And then, the counter is decided whether to be operating normally or not on the basis of the result of the comparison.
摘要:
A write address counter for designating a write address of a memory counts up a control counter with an address change. A read address counter for designating a read address of the memory counts down the control counter with the address change. Inputted to an error detecting circuit are a write address counter value, a read address counter value and a control count value. There is detected whether a relationship such as Write Address Count Value-Read Address Count Value=Control Count Value is established or not. If not established, this implies an error, and a reset circuit resets each counter.
摘要:
A chip detection method includes: providing a chip to be tested, the chip having multiple one-time programmable memories (OTPMs); transmitting a test signal to the chip to maintain the OTPMs in the chip in a latched state; and detecting whether the chip emits a low-light signal, and if yes, determining that an OTPM is leaky. The chip detection method and device can detect an OTPM that is burnt through by mistake, and can also detect an OTPM that has slight leakage, thereby preventing a defective product with a potential burn-through risk from entering a subsequent production process.
摘要:
A memory control component has control circuitry and a data interface, the data interface to be coupled, via a plurality of data signaling paths, to a respective plurality of memory dies disposed on a memory module. The control circuitry transmits to the memory module a first configuration value that specifies a memory die quantity N that is permitted to range from a first value corresponding to the quantity of the data signaling paths to at least one value less than the first value. Thereafter, the control circuitry transmits a memory read command to the memory module to enable, in accordance with the first configuration value, a quantity N of the memory dies to output read data and enables the data interface to receive the read data via a respective quantity N of the data signaling paths.