Invention Grant
- Patent Title: Thin film transistor panel and method for manufacturing the same
- Patent Title (中): 薄膜晶体管面板及其制造方法
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Application No.: US13915070Application Date: 2013-06-11
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Publication No.: US09136284B2Publication Date: 2015-09-15
- Inventor: Sung Kyun Park , Jeong Min Park , Jung-Soo Lee , Jin Ho Ju
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0000770 20130103
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/15

Abstract:
A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulation substrate; a thin film transistor disposed on the insulation substrate, wherein the thin film transistor includes a first electrode; a first contact hole pattern having a first width, wherein the first contact hole pattern exposes a portion of the first electrode, and a first contact hole to expose the portion of the first electrode, wherein an inner sidewall of the first contact hole pattern constitutes a first portion of the first contact hole.
Public/Granted literature
- US20140183536A1 THIN FILM TRANSISTOR PANEL AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-07-03
Information query
IPC分类: