Invention Grant
- Patent Title: Bottom source substrateless power MOSFET
- Patent Title (中): 底部源无源功率MOSFET
-
Application No.: US13871144Application Date: 2013-04-26
-
Publication No.: US09136379B2Publication Date: 2015-09-15
- Inventor: Yueh-Se Ho , Yan Xun Xue , Ping Huang
- Applicant: Yueh-Se Ho , Yan Xun Xue , Ping Huang
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: CH Emily LLC
- Agent Chein-Hwa Tsao
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A bottom source power metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a gate electrode and a source electrode formed on an initial insulation layer on a first surface of a semiconductor chip and a drain electrode formed on a second surface of the semiconductor chip. The source electrode includes a source metal, a source electrode bump formed on the source metal and a source electrode metal layer on top of the source electrode bump. A first insulation layer covers the gate electrode. A through via aligned to the gate electrode is formed from the second surface of the chip to expose a portion of the gate electrode from the second surface.
Public/Granted literature
- US20140319601A1 BOTTOM SOURCE SUBSTRATELESS POWER MOSFET Public/Granted day:2014-10-30
Information query
IPC分类:
