Abstract:
A multi-chip stack structure and a fabrication method thereof are proposed, including providing a leadframe having a die base and a plurality of leads and disposing a first and a second chips on the two surfaces of the die base respectively; disposing the leadframe on a heating block having a cavity in a wire bonding process with the second chip received in the cavity of the heating block; performing a first wire bonding process to electrically connect the first chip to the leads through a plurality of first bonding wires, and forming a bump on one side of the leads connected with the first bonding wires; disposing the leadframe in an upside down manner to the heating block via the bump with the first chip and the first bonding wires received in the cavity of the heating block; and performing a second wire bonding process to electrically connect the second chip to the leads through a plurality of second bonding wires. The bump is used for supporting the leads to a certain height so as to keep the bonding wires from contacting the heating block and eliminate the need of using a second heating block in the second wire bonding process of the prior art, thereby saving time and costs in a fabrication process. Also, as positions where the first and second bonding wires are bonded to the leads on opposite sides of the leadframe correspond with each other, the conventional problems of adversely affected electrical performance and electrical mismatch can be prevented.
Abstract:
In some examples, a method includes receiving a user input string and generating an application password for a particular application from the user input string. Generating the application password may include generating a key for the particular application and specifying a derivation parameter of the application password by applying an indiscriminate selection process to select a character set from multiple character sets for generating the application password. Generating the application password may also include mapping a portion of a hash value of the key and the user input string to characters of the character set selected through the indiscriminate selection process to obtain the application password.
Abstract:
A method for thermal process in packaging assembly of semiconductor is disclosed. The high-pressure overheated vapor is injected into the process chamber. The overheated vapor becomes saturated vapor in atmosphere (1 ATM) immediately and generates condensed liquid film onto all the surface of semiconductor work and also the chamber walls as condensation phenomenon occurs. The process temperature of vapor condensation is very close to and never exceeds the boiling point of perfluorinated compounds (PFC). Therefore, the latent heat of the saturated vapor is transferred to semiconductor work through the surface of liquid film evenly and uniformly.
Abstract:
Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.
Abstract:
The disclosure provides a zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same. The zinc oxide anti-reflection layer includes: a zinc oxide lower portion, wherein the zinc oxide lower portion has a nanorod array structure; and a zinc oxide upper portion connected to the zinc oxide lower portion, wherein the zinc oxide anti-reflection layer has a syringe-like structure.
Abstract:
Soft polishing pads for polishing semiconductor substrates are described. A soft polishing pad includes a molded homogeneous polishing body having a thermoset, closed cell polyurethane material with a hardness approximately in the range of 20 Shore D to 45 Shore D.
Abstract:
Methods, systems, and apparatus, for an external cavity FP laser. In one aspect, an apparatus is provided that includes a FP laser diode; a Faraday rotator (FR) coupled to receive an optical output of the FP laser diode and that rotates a polarization of the optical output; an optical fiber coupled at a first end to receive the output of the FR; a WDM filter coupled to a second end of the optical fiber to receive the optical signal from the optical fiber; and a FRM coupled directly or indirectly to an output of the WDM filter, wherein an optical output of the WDM filter is partially reflected by the FRM such that the polarization of a reflected beam is rotated, and wherein the reflected optical signal then passes through the FR with its polarization being rotated by the FR before it is injected back into the FP laser diode.
Abstract:
A vertical flow meter comprises a vertical barrel, an adjustment mechanism and an induction mechanism. The vertical barrel has a flow passage inside to house a vertical rod and a magnetic element coupling on the vertical rod. The adjustment mechanism straddles a holding plate and a scale plate that are located at two sides of the vertical barrel, and includes an adjustment portion at one side thereof, at least one adjustment member corresponding to a second elongate slot of the scale plate and fastening to the adjustment portion, a protrusive connection portion at another side opposite to the adjustment portion, and a connection plank connecting with the adjustment portion and protrusive connection portion. The induction mechanism is disposed at one side of the protrusive connection portion. Through magnetic attraction between the induction mechanism and the magnetic element, the adjustment mechanism can be moved upward or downward on the scale plate.
Abstract:
A rotatable and extendable mop includes a first rod body, a second rod body and a mop head. An end of the second rod body is sheathed with the first rod body, extending and moving relatively with respect to the first rod body. An end of the mop head is connected to the other end of the second rod body including a first connector, a second connector, a retainer, a gasket, a spring and a link rod. The first connector is sheathed with the second connector, and includes a first clip part corresponding to a first helical track, allowing the first clip part to traverse in the first helical track. An end of the link rod is connected to the second connector, and the retainer, gasket and spring are sheathed orderly with the link rod relative to the second connector. The retainer is fastened to the first connector.
Abstract:
A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed.