Invention Grant
- Patent Title: Storage circuit with random number generation mode
- Patent Title (中): 具有随机数生成模式的存储电路
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Application No.: US13678621Application Date: 2012-11-16
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Publication No.: US09141338B2Publication Date: 2015-09-22
- Inventor: Sachin Satish Idgunji , Vikas Chandra
- Applicant: ARM Limited
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: G06F7/58
- IPC: G06F7/58

Abstract:
A storage circuit 2 in the form of a master slave latch includes a slave stage 6 serving as a bit storage circuit. The slave stage 6 includes an inverter chain which when operating in a normal mode includes an even number of inverters 10, 12 and when operating in an random number generation mode includes an odd number of inverters 10, 12, 14 and so functions as a free running ring oscillator. When a switch is made back from the random number generation mode to the normal mode, then the oscillation ceases and a stable pseudo random bit value is output from the bit value storage circuit 6.
Public/Granted literature
- US20140143291A1 STORAGE CIRCUIT WITH RANDOM NUMBER GENERATION MODE Public/Granted day:2014-05-22
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