Invention Grant
US09142401B2 Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure
有权
具有连续的硅酸盐玻璃结构的半导体器件和半导体器件的制造方法
- Patent Title: Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure
- Patent Title (中): 具有连续的硅酸盐玻璃结构的半导体器件和半导体器件的制造方法
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Application No.: US14305359Application Date: 2014-06-16
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Publication No.: US09142401B2Publication Date: 2015-09-22
- Inventor: Hans-Joachim Schulze , Alexander Susiti , Markus Zundel , Reinhard Ploss
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/02 ; H01L23/29 ; H01L23/31 ; H01L29/10 ; H01L29/78 ; H01L29/49 ; H01L29/66 ; H01L29/739 ; H01L21/3115 ; H01L29/06 ; H01L29/423 ; H01L29/40
Abstract:
A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.
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