Invention Grant
- Patent Title: Double/multiple fin structure for FinFET devices
- Patent Title (中): FinFET器件的双/多鳍结构
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Application No.: US14281726Application Date: 2014-05-19
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Publication No.: US09142418B1Publication Date: 2015-09-22
- Inventor: InSoo Jung , Wonwoo Kim
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/308 ; H01L21/02 ; H01L29/06 ; H01L29/78
Abstract:
A method of forming double and/or multiple numbers of fins of a FinFET device using a Si/SiGe selective epitaxial growth process and the resulting device are provided. Embodiments include forming a Si pillar in an oxide layer, the Si pillar having a bottom portion and a top portion; removing the top portion of the Si pillar; forming a SiGe pillar on the bottom portion of the Si pillar; reducing the SiGe pillar; forming a first set of Si fins on opposite sides of the reduced SiGe pillar; removing the SiGe pillar; replacing the Si fins with SiGe fins; reducing the SiGe fins; forming a second set of Si fins on opposite sides of the SiGe fins; and removing the SiGe fins.
Public/Granted literature
- US1708153A Liquid-control means for hydraulic brakes Public/Granted day:1929-04-09
Information query
IPC分类:
