Invention Grant
- Patent Title: Semiconductor device having an ESD protection circuit
- Patent Title (中): 具有ESD保护电路的半导体器件
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Application No.: US14172217Application Date: 2014-02-04
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Publication No.: US09142543B2Publication Date: 2015-09-22
- Inventor: Takashi Katakura , Hirofumi Harada , Yoshitsugu Hirose
- Applicant: SEIKO INSTRUMENTS INC.
- Applicant Address: JP
- Assignee: SEIKO INSTRUMENTS INC.
- Current Assignee: SEIKO INSTRUMENTS INC.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2013-021626 20130206; JP2013-254351 20131209
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
An ESD protection circuit having a smaller area is provided. The ESD protection circuit includes: a P-type diffusion resistor 12 whose one end is connected to an input terminal 11 formed in the N-type well; a diode 14 disposed between the diffusion resistor 12 and the N-type well connected to the power supply terminal; an NMOS transistor 15 whose drain is connected to the other end of the diffusion resistor 12; and a parasitic diode formed between the power supply terminal and the ground terminal.
Public/Granted literature
- US20140217511A1 SEMICONDUCTOR DEVICE HAVING AN ESD PROTECTION CIRCUIT Public/Granted day:2014-08-07
Information query
IPC分类:
