Invention Grant
US09142669B2 Thin film transistor substrate having a thin film transistor having multiple top gates and organic light emitting device using the same
有权
具有具有多个顶栅的薄膜晶体管和使用其的有机发光器件的薄膜晶体管基板
- Patent Title: Thin film transistor substrate having a thin film transistor having multiple top gates and organic light emitting device using the same
- Patent Title (中): 具有具有多个顶栅的薄膜晶体管和使用其的有机发光器件的薄膜晶体管基板
-
Application No.: US14266227Application Date: 2014-04-30
-
Publication No.: US09142669B2Publication Date: 2015-09-22
- Inventor: Jung Hyun Lee , Won Joon Ho , Hong Jae Shin
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG DISPLAY CO., LTD.
- Current Assignee: LG DISPLAY CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Dentons US LLP
- Priority: KR10-2013-0048286 20130430
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L35/24 ; H01L51/00 ; H01L29/10 ; H01L29/04 ; H01L31/00 ; H01L27/14 ; H01L29/15 ; H01L29/78 ; H01L29/786 ; H01L27/32 ; H01L27/12 ; H01L29/417 ; H01L51/40 ; H01L21/00 ; H01L21/84 ; H01J1/62 ; H01J63/04
Abstract:
A thin film transistor substrate provided with two gate electrodes comprises a thin film transistor including a first gate electrode formed on the substrate; an active layer formed on the first gate electrode; first and second electrodes formed on the active layer; and a second gate electrode formed on the first electrode, the second electrode, and the active layer, wherein the second gate electrode is provided with an opening formed in an area corresponding to at least a part of the second electrode.
Public/Granted literature
- US20140319498A1 THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME Public/Granted day:2014-10-30
Information query
IPC分类:
