Invention Grant
US09142692B2 Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods
有权
用于短脉冲切换和方法的基于晶闸管的双极性阻挡光导半导体开关(PCSS)
- Patent Title: Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods
- Patent Title (中): 用于短脉冲切换和方法的基于晶闸管的双极性阻挡光导半导体开关(PCSS)
-
Application No.: US13947451Application Date: 2013-07-22
-
Publication No.: US09142692B2Publication Date: 2015-09-22
- Inventor: Yeuan-Ming Sheu
- Applicant: BAE Systems Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agent Daniel J. Long
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L29/74 ; H01L31/0352 ; H01L31/0224 ; H01L31/111

Abstract:
A system and method utilizing thyristor-based Photo-Conductive Semiconductor Switches (PCSS) for short pulse switching in high power microwave and/or broadband electromagnetic pulse generation is disclosed. The PCSS consists of thyristor-type NPNP structure having multiple emitter regions enclosed by the base region and multiple emitter shorts to divert leakage currents for voltage holding. The PCSS also includes an optical aperture comprised of patterned metallic grids for light illumination and current collection. The device structure is so constructed that there is only one single bevel around the peripheral. The thyristor-based PCSS have dual polarities of voltage blocking and have better efficiency for light requirement to operate at longer pulse duration compared to diode-based and bulk-semiconductor-based PCSS.
Public/Granted literature
Information query
IPC分类: