Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods
    1.
    发明授权
    Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods 有权
    用于短脉冲切换和方法的基于晶闸管的双极性阻挡光导半导体开关(PCSS)

    公开(公告)号:US09142692B2

    公开(公告)日:2015-09-22

    申请号:US13947451

    申请日:2013-07-22

    Inventor: Yeuan-Ming Sheu

    Abstract: A system and method utilizing thyristor-based Photo-Conductive Semiconductor Switches (PCSS) for short pulse switching in high power microwave and/or broadband electromagnetic pulse generation is disclosed. The PCSS consists of thyristor-type NPNP structure having multiple emitter regions enclosed by the base region and multiple emitter shorts to divert leakage currents for voltage holding. The PCSS also includes an optical aperture comprised of patterned metallic grids for light illumination and current collection. The device structure is so constructed that there is only one single bevel around the peripheral. The thyristor-based PCSS have dual polarities of voltage blocking and have better efficiency for light requirement to operate at longer pulse duration compared to diode-based and bulk-semiconductor-based PCSS.

    Abstract translation: 公开了一种在高功率微波和/或宽带电磁脉冲生成中利用基于晶闸管的光电导体半导体开关(PCSS)进行短脉冲切换的系统和方法。 PCSS由具有由基极区域包围的多个发射极区域和多个发射极短路的晶闸管型NPNP结构组成,以转移用于电压保持的漏电流。 PCSS还包括由图案化金属网格组成的光学孔径,用于光照和电流采集。 器件结构的结构使得外围周围只有一个斜面。 基于晶闸管的PCSS具有双极性的电压阻塞,并且与基于二极管和基于体半导体的PCSS相比,在更长的脉冲持续时间下,对于光需求的操作具有更好的效率。

    Thyristor-Based, Dual-Polarity Blocking Photo-Conductive Semiconductor Switch (PCSS) For Short Pulse Switching And Methods
    3.
    发明申请
    Thyristor-Based, Dual-Polarity Blocking Photo-Conductive Semiconductor Switch (PCSS) For Short Pulse Switching And Methods 有权
    基于晶闸管的双极性阻挡光电半导体开关(PCSS)用于短脉冲切换和方法

    公开(公告)号:US20140021508A1

    公开(公告)日:2014-01-23

    申请号:US13947451

    申请日:2013-07-22

    Inventor: Yeuan-Ming Sheu

    Abstract: A system and method utilizing thyristor-based Photo-Conductive Semiconductor Switches (PCSS) for short pulse switching in high power microwave and/or broadband electromagnetic pulse generation is disclosed. The PCSS consists of thyristor-type NPNP structure having multiple emitter regions enclosed by the base region and multiple emitter shorts to divert leakage currents for voltage holding. The PCSS also includes an optical aperture comprised of patterned metallic grids for light illumination and current collection. The device structure is so constructed that there is only one single bevel around the peripheral. The thyristor-based PCSS have dual polarities of voltage blocking and have better efficiency for light requirement to operate at longer pulse duration compared to diode-based and bulk-semiconductor-based PCSS.

    Abstract translation: 公开了一种在高功率微波和/或宽带电磁脉冲生成中利用基于晶闸管的光电导体半导体开关(PCSS)进行短脉冲切换的系统和方法。 PCSS由具有由基极区域包围的多个发射极区域和多个发射极短路的晶闸管型NPNP结构组成,以转移用于电压保持的漏电流。 PCSS还包括由图案化金属网格组成的光学孔径,用于光照和电流采集。 器件结构的结构使得外围周围只有一个斜面。 基于晶闸管的PCSS具有双极性的电压阻塞,并且与基于二极管和基于体半导体的PCSS相比,在更长的脉冲持续时间下,对于光需求的操作具有更好的效率。

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