Invention Grant
- Patent Title: Open air plasma deposition system
- Patent Title (中): 露天等离子体沉积系统
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Application No.: US13286957Application Date: 2011-11-01
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Publication No.: US09145602B2Publication Date: 2015-09-29
- Inventor: Marvi A. Matos , Liam S. Cavanaugh Pingree
- Applicant: Marvi A. Matos , Liam S. Cavanaugh Pingree
- Applicant Address: US IL Chicago
- Assignee: THE BOEING COMPANY
- Current Assignee: THE BOEING COMPANY
- Current Assignee Address: US IL Chicago
- Agency: Yee & Associates, P.C.
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C14/22 ; C23C14/46 ; H01J37/32

Abstract:
An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.
Public/Granted literature
- US20130108803A1 Open Air Plasma Deposition System and Method Public/Granted day:2013-05-02
Information query
IPC分类: