Invention Grant
US09147465B2 Circuit for controlling sense amplifier source node in semiconductor memory device and controlling method thereof
有权
用于控制半导体存储器件中的读出放大器源节点的电路及其控制方法
- Patent Title: Circuit for controlling sense amplifier source node in semiconductor memory device and controlling method thereof
- Patent Title (中): 用于控制半导体存储器件中的读出放大器源节点的电路及其控制方法
-
Application No.: US14139736Application Date: 2013-12-23
-
Publication No.: US09147465B2Publication Date: 2015-09-29
- Inventor: Young-Hun Seo , Chul-Sung Park , Young-Dae Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0044325 20130422
- Main IPC: G11C11/4091
- IPC: G11C11/4091
Abstract:
Provided is a bit line sense amplifier source node control circuit of a semiconductor memory device. The sense amplifier source node control circuit may include a source driver connected between a source node of a sense amplifier and a sense amplifier driving signal line, for driving the source node of the sense amplifier to a set voltage level. The sense amplifier source node control circuit may also include: a floating circuit for floating the sense amplifier driving signal line in a set operating mode; and a controller connected in parallel with the source driver between the source node of the sense amplifier and the sense amplifier driving signal line, for controlling a level of the sense amplifier driving signal line in the set operating mode.
Public/Granted literature
Information query
IPC分类:
