公开(公告)号：US09099196B2

公开(公告)日：2015-08-04

申请号：US14141233

申请日：2013-12-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Woo Ryu ,  Young-Dae Lee

IPC: G11C11/00 ,  G11C11/406 ,  G11C11/4074

CPC classification number: G11C11/40626 ,  G11C11/4074

Abstract: A method of operating a semiconductor memory device is disclosed. The method may include receiving an access command, applying a first voltage to a selected word line of the semiconductor memory device for a period of time in response to receiving the access command, applying a second voltage to word lines adjacent to the selected word line before and after the period of time, and applying a third voltage to the word lines adjacent to the selected word line for the period of time, a voltage level of the third voltage greater than the second voltage. The applying the third voltage may occur when the semiconductor memory device is operated at a temperature below the predetermined temperature.

Abstract translation: 公开了一种操作半导体存储器件的方法。 该方法可以包括接收访问命令，响应于接收到访问命令，将半导体存储器件的选定字线施加第一电压一段时间，将第二电压施加到与选定字线相邻的字线之前 并且在所述时间段之后，并且对于与所选择的字线相邻的字线在一段时间内施加第三电压，所述第三电压的电压电平大于所述第二电压。 当半导体存储器件在低于预定温度的温度下工作时，施加第三电压可能发生。

公开(公告)号：US10564751B2

公开(公告)日：2020-02-18

申请号：US15748883

申请日：2016-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Yong Park ,  Jeong-Wook Seo ,  Young-Gyun Lee ,  Young-Dae Lee ,  Jae-Hak Lee ,  Min-Ho Kim ,  Cheong-Jae Lee

IPC: G06F3/041 ,  G06F3/0354 ,  G06F3/01

Abstract: An electronic device according to various examples comprises: a touch screen display including a touch panel; a processor electrically connected to the display; and a memory electrically connected to the processor, wherein the memory can be set to store instructions that, when executed, enable the processor to: receive, from the touch panel, data related to contact or proximity of an external object to the touch screen display; determine an area detected by the touch panel through the contact or the proximity on the basis of at least a part of the data; determine at least a part of the area having a relatively stronger signal strength in the area; determine at least another part of the area having a relatively weaker signal strength in the area; and display an image or a change in an image on the display on the basis of positions and/or sizes of the determined areas.

公开(公告)号：US09147465B2

公开(公告)日：2015-09-29

申请号：US14139736

申请日：2013-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hun Seo ,  Chul-Sung Park ,  Young-Dae Lee

IPC: G11C11/4091

CPC classification number: G11C11/4091

Abstract: Provided is a bit line sense amplifier source node control circuit of a semiconductor memory device. The sense amplifier source node control circuit may include a source driver connected between a source node of a sense amplifier and a sense amplifier driving signal line, for driving the source node of the sense amplifier to a set voltage level. The sense amplifier source node control circuit may also include: a floating circuit for floating the sense amplifier driving signal line in a set operating mode; and a controller connected in parallel with the source driver between the source node of the sense amplifier and the sense amplifier driving signal line, for controlling a level of the sense amplifier driving signal line in the set operating mode.

Abstract translation: 提供了半导体存储器件的位线读出放大器源节点控制电路。 感测放大器源节点控制电路可以包括连接在读出放大器的源节点和读出放大器驱动信号线之间的源极驱动器，用于将读出放大器的源极节点驱动到设定的电压电平。 感测放大器源节点控制电路还可以包括：用于在设定的工作模式下浮置读出放大器驱动信号线的浮置电路; 以及与感测放大器的源极节点和感测放大器驱动信号线之间的源极驱动器并联连接的控制器，用于在设定的工作模式下控制读出放大器驱动信号线的电平。