Invention Grant
- Patent Title: Programming methods and memories
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Application No.: US14108822Application Date: 2013-12-17
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Publication No.: US09147476B2Publication Date: 2015-09-29
- Inventor: Vishal Sarin , William H. Radke , Frankie F. Roohparvar
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C16/10 ; G11C16/04 ; G11C16/34
Abstract:
Methods of programming a memory and memories are disclosed. In at least one embodiment, a memory is programmed by determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using pretarget threshold voltage values for at least one neighbor cell of the selected cell.
Public/Granted literature
- US09177651B2 Programming methods and memories Public/Granted day:2015-11-03
Information query
