Invention Grant
- Patent Title: Semiconductor memory devices including support patterns
- Patent Title (中): 半导体存储器件包括支持图案
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Application No.: US14475844Application Date: 2014-09-03
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Publication No.: US09147685B2Publication Date: 2015-09-29
- Inventor: Kyungmun Byun , Hyongsoo Kim , Mansug Kang , Eunkee Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2011-0017872 20110228
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L49/02
Abstract:
A capacitor dielectric can be between the storage node and the electrode layer. A supporting pattern can be connected to the storage node, where the supporting pattern can include at least one first pattern and at least one second pattern layered on one another, where the first pattern can include a material having an etch selectivity with respect to the second pattern.
Public/Granted literature
- US20140367755A1 SEMICONDUCTOR MEMORY DEVICES INCLUDING SUPPORT PATTERNS Public/Granted day:2014-12-18
Information query
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