公开(公告)号：US10224213B2

公开(公告)日：2019-03-05

申请号：US15444381

申请日：2017-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungmun Byun ,  Sinhae Do ,  Badro Im

IPC: H01L21/308 ,  H01L21/28 ,  H01L21/3213

Abstract: A method for forming patterns of a semiconductor device includes sequentially forming a hard mask layer, a sacrificial layer, and an anti-reflection layer on a substrate, the substrate including a cell region and a peripheral circuit region, patterning the sacrificial layer to form a first sacrificial pattern on the cell region and a second sacrificial pattern on the peripheral circuit region, forming spacers covering sidewalls of the first and second sacrificial patterns, and removing the first sacrificial pattern. The anti-reflection layer includes a lower anti-reflection layer and an upper anti-reflection layer which are formed of materials different from each other. In the patterning of the sacrificial layer, the anti-reflection layer is patterned to form a first anti-reflection pattern on the first sacrificial pattern and a second anti-reflection pattern on the second sacrificial pattern. The second anti-reflection pattern remains when the first sacrificial pattern is removed.

公开(公告)号：US09147685B2

公开(公告)日：2015-09-29

申请号：US14475844

申请日：2014-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungmun Byun ,  Hyongsoo Kim ,  Mansug Kang ,  Eunkee Hong

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10808 ,  H01L27/10852 ,  H01L28/90

Abstract: A capacitor dielectric can be between the storage node and the electrode layer. A supporting pattern can be connected to the storage node, where the supporting pattern can include at least one first pattern and at least one second pattern layered on one another, where the first pattern can include a material having an etch selectivity with respect to the second pattern.

Abstract translation: 电容器电介质可以在存储节点和电极层之间。 支撑图案可以连接到存储节点，其中支撑图案可以包括至少一个第一图案和彼此分层的至少一个第二图案，其中第一图案可以包括具有相对于第二图案的蚀刻选择性的材料 模式。