Invention Grant
US09147695B2 Device with FD-SOI cell and insulated semiconductor contact region and related methods
有权
具有FD-SOI单元和绝缘半导体接触区的器件及相关方法
- Patent Title: Device with FD-SOI cell and insulated semiconductor contact region and related methods
- Patent Title (中): 具有FD-SOI单元和绝缘半导体接触区的器件及相关方法
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Application No.: US14096509Application Date: 2013-12-04
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Publication No.: US09147695B2Publication Date: 2015-09-29
- Inventor: Frédéric Hasbani , Eric Remond
- Applicant: STMICROELECTRONICS SA
- Applicant Address: FR Montrouge
- Assignee: STMICROELECTRONICS SA
- Current Assignee: STMICROELECTRONICS SA
- Current Assignee Address: FR Montrouge
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1262032 20121214
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/84 ; H01L29/786
Abstract:
An integrated cell may include an nMOS transistor, and an pMOS transistor. The cell may be produced in fully depleted silicon-on-insulator technology, and it is possible for the substrates of the transistors of the cell to be biased with the same adjustable biasing voltage.
Public/Granted literature
- US20140167167A1 CMOS CELL PRODUCED IN FD-SOI TECHNOLOGY Public/Granted day:2014-06-19
Information query
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