公开(公告)号：US09147695B2

公开(公告)日：2015-09-29

申请号：US14096509

申请日：2013-12-04

Applicant: STMICROELECTRONICS SA

Inventor： Frédéric Hasbani ,  Eric Remond

IPC: H01L27/12 ,  H01L21/84 ,  H01L29/786

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L29/78648

Abstract: An integrated cell may include an nMOS transistor, and an pMOS transistor. The cell may be produced in fully depleted silicon-on-insulator technology, and it is possible for the substrates of the transistors of the cell to be biased with the same adjustable biasing voltage.

Abstract translation: 集成单元可以包括nMOS晶体管和pMOS晶体管。 电池可以在完全耗尽的绝缘体上的技术中制造，并且可以以相同的可调偏置电压来偏置电池的晶体管的衬底。

公开(公告)号：US09013228B2

公开(公告)日：2015-04-21

申请号：US14160369

申请日：2014-01-21

Applicant: STMicroelectronics SA

Inventor： Frédéric Hasbani

IPC: G05F1/10 ,  H03K19/00

CPC classification number: H03K19/0016 ,  H03K19/0013 ,  H03K2217/0018

Abstract: Embodiments described in the present disclosure relate to a method for providing power for an integrated system, including acts of: providing the system with power, ground and body bias voltages, the body bias voltages comprising a body bias voltage of p-channel MOS transistors, greater or lower than the supply voltage, and a body bias voltage of n-channel MOS transistors, lower or greater than the ground voltage, selecting by means of the system out of the voltages provided, depending on whether a processing unit of the system is in a period of activity or inactivity, voltages to be supplied to bias the bodies of the MOS transistors of the processing unit, and providing the bodies of the MOS transistors of the processing unit with the voltages selected.

Abstract translation: 本公开中描述的实施例涉及一种用于为集成系统提供电力的方法，包括以下动作：向系统提供电源，接地和体偏置电压，体偏置电压包括p沟道MOS晶体管的体偏置电压， 大于或低于电源电压，以及n沟道MOS晶体管的体偏置电压低于或大于接地电压，根据系统的处理单元是否由系统提供的电压进行选择 在活动或不活动的时段期间，提供用于偏置处理单元的MOS晶体管的主体的电压，以及为处理单元的MOS晶体管的主体提供所选择的电压。

公开(公告)号：US20140132338A1

公开(公告)日：2014-05-15

申请号：US14160369

申请日：2014-01-21

Applicant: STMicroelectronics SA

Inventor： Frédéric Hasbani

IPC: H03K3/012

CPC classification number: H03K19/0016 ,  H03K19/0013 ,  H03K2217/0018

Abstract: Embodiments described in the present disclosure relate to a method for providing power for an integrated system, including acts of: providing the system with power, ground and body bias voltages, the body bias voltages comprising a body bias voltage of p-channel MOS transistors, greater or lower than the supply voltage, and a body bias voltage of n-channel MOS transistors, lower or greater than the ground voltage, selecting by means of the system out of the voltages provided, depending on whether a processing unit of the system is in a period of activity or inactivity, voltages to be supplied to bias the bodies of the MOS transistors of the processing unit, and providing the bodies of the MOS transistors of the processing unit with the voltages selected.

Abstract translation: 本公开中描述的实施例涉及一种用于为集成系统提供电力的方法，包括以下动作：向系统提供电源，接地和体偏置电压，体偏置电压包括p沟道MOS晶体管的体偏置电压， 大于或低于电源电压，以及n沟道MOS晶体管的体偏置电压低于或大于接地电压，根据系统的处理单元是否由系统提供的电压进行选择 在活动或不活动的时段期间，提供用于偏置处理单元的MOS晶体管的主体的电压，以及为处理单元的MOS晶体管的主体提供所选择的电压。