公开(公告)号：US20140354276A1

公开(公告)日：2014-12-04

申请号：US14286431

申请日：2014-05-23

Applicant: STMicroelectronics SA

Inventor： Severin Trochut ,  Eric Remond

IPC: G01R33/07 ,  H01L43/06 ,  H01L43/04

CPC classification number: G01R33/072 ,  H01L43/04 ,  H01L43/065

Abstract: The generation of a Hall voltage within a semiconductor film of an integrated Hall effect sensor uses the flow of a current within the semiconductor film when subjected to a magnetic field. The film is disposed on top of an insulating layer, referred to as buried layer, which is itself disposed on top of a carrier substrate containing a buried electrode that is situated under the insulating layer. A biasing voltage is applied to the buried electrode.

Abstract translation: 集成的霍尔效应传感器的半导体膜内的霍尔电压的产生在受到磁场时使用半导体膜内的电流的流动。 膜被设置在绝缘层的顶部，被称为掩埋层，其本身设置在包含位于绝缘层下方的掩埋电极的载体衬底的顶部上。 偏置电压施加到埋入电极。

公开(公告)号：US09147695B2

公开(公告)日：2015-09-29

申请号：US14096509

申请日：2013-12-04

Applicant: STMICROELECTRONICS SA

Inventor： Frédéric Hasbani ,  Eric Remond

IPC: H01L27/12 ,  H01L21/84 ,  H01L29/786

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L29/78648

Abstract: An integrated cell may include an nMOS transistor, and an pMOS transistor. The cell may be produced in fully depleted silicon-on-insulator technology, and it is possible for the substrates of the transistors of the cell to be biased with the same adjustable biasing voltage.

Abstract translation: 集成单元可以包括nMOS晶体管和pMOS晶体管。 电池可以在完全耗尽的绝缘体上的技术中制造，并且可以以相同的可调偏置电压来偏置电池的晶体管的衬底。

公开(公告)号：US20140167167A1

公开(公告)日：2014-06-19

申请号：US14096509

申请日：2013-12-04

Applicant: STMICROELECTRONICS SA

Inventor： Frederic HASBANI ,  Eric Remond

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L29/78648

Abstract: An integrated cell may include an nMOS transistor, and an pMOS transistor. The cell may be produced in fully depleted silicon-on-insulator technology, and it is possible for the substrates of the transistors of the cell to be biased with the same adjustable biasing voltage.

Abstract translation: 集成单元可以包括nMOS晶体管和pMOS晶体管。 电池可以在完全耗尽的绝缘体上的技术中制造，并且可以以相同的可调偏置电压来偏置电池的晶体管的衬底。

公开(公告)号：US09671473B2

公开(公告)日：2017-06-06

申请号：US14286431

申请日：2014-05-23

Applicant: STMicroelectronics SA

Inventor： Severin Trochut ,  Eric Remond

IPC: G01R33/07 ,  H01L43/04 ,  H01L43/06

CPC classification number: G01R33/072 ,  H01L43/04 ,  H01L43/065

Abstract: The generation of a Hall voltage within a semiconductor film of an integrated Hall effect sensor uses the flow of a current within the semiconductor film when subjected to a magnetic field. The film is disposed on top of an insulating layer, referred to as buried layer, which is itself disposed on top of a carrier substrate containing a buried electrode that is situated under the insulating layer. A biasing voltage is applied to the buried electrode.