Invention Grant
US09147752B2 Transistor device with reduced gate resistance 有权
具有降低栅极电阻的晶体管器件

Transistor device with reduced gate resistance
Abstract:
A device with reduced gate resistance includes a gate structure having a first conductive portion and a second conductive portion formed in electrical contact with the first conductive portion and extending laterally beyond the first conductive portion. The gate structure is embedded in a dielectric material and has a gate dielectric on the first conductive portion. A channel layer is provided over the first conductive portion. Source and drain electrodes are formed on opposite end portions of a channel region of the channel layer. Methods for forming a device with reduced gate resistance are also provided.
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