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    N-type end-bonded metal contacts for carbon nanotube transistors
    1.
    发明授权
    N-type end-bonded metal contacts for carbon nanotube transistors 有权

    公开(公告)号：US11545641B2

    公开(公告)日：2023-01-03

    申请号：US16807488

    申请日：2020-03-03

    Applicant: International Business Machines Corporation

    Inventor： Damon B. Farmer ,  Shu-Jen Han ,  Jianshi Tang

    IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05

    Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer.

    Controlled drug delivery in point-of-care drug delivery system based on real-time monitoring with integrated sensor
    3.
    发明授权
    Controlled drug delivery in point-of-care drug delivery system based on real-time monitoring with integrated sensor 有权

    公开(公告)号：US11202860B2

    公开(公告)日：2021-12-21

    申请号：US16001391

    申请日：2018-06-06

    Applicant: International Business Machines Corporation

    Inventor： Qing Cao ,  Shu-Jen Han ,  Jianshi Tang ,  Bharat Kumar

    IPC: A61M5/168 ,  A61M5/172 ,  A61B5/00

    Abstract: A drug delivery system includes a substrate, an integrated sensor disposed on the substrate, a drug delivery element disposed on the substrate, and a control unit coupled to the integrated sensor and the drug delivery element. The integrated sensor includes first and second electrodes disposed on a first surface of the substrate. The drug delivery element includes a reservoir disposed on the first surface of the substrate, a thermally active polymer enclosing the reservoir, and a heating coil disposed over the thermally active polymer. The control unit is configured to measure a biological parameter by measuring a voltage difference between the first and second electrodes of the integrated sensor, and to apply a trigger signal to the heating coil of the drug delivery element responsive to the measured biological parameter indicating a designated condition to heat up the thermally active polymer to selectively release a drug from the reservoir.

    Carbon nanotube transistor and logic with end-bonded metal contacts
    4.
    发明授权
    Carbon nanotube transistor and logic with end-bonded metal contacts 有权

    公开(公告)号：US11121335B2

    公开(公告)日：2021-09-14

    申请号：US16807437

    申请日：2020-03-03

    Applicant: International Business Machines Corporation

    Inventor： Damon B. Farmer ,  Shu-Jen Han ,  Jianshi Tang

    IPC: H01L29/06 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05

    Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.

    Carbon nanotube transistor and logic with end-bonded metal contacts
    9.
    发明授权
    Carbon nanotube transistor and logic with end-bonded metal contacts 有权

    公开(公告)号：US10665798B2

    公开(公告)日：2020-05-26

    申请号：US15210463

    申请日：2016-07-14

    Applicant: International Business Machines Corporation

    Inventor： Damon B. Farmer ,  Shu-Jen Han ,  Jianshi Tang

    IPC: H01L29/06 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05

    Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.

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