Invention Grant
- Patent Title: ESD robust level shifter
- Patent Title (中): ESD鲁棒电平转换器
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Application No.: US13630721Application Date: 2012-09-28
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Publication No.: US09154133B2Publication Date: 2015-10-06
- Inventor: Muhammad Yusuf Ali , Rajkumar Sankaralingam , Charles M. Branch
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent John Pessetto; Frank D. Cimino
- Main IPC: H03H9/46
- IPC: H03H9/46 ; H03K19/003 ; H02H9/04 ; H01L27/02

Abstract:
An inverter type level shifter includes a first power supply voltage and a first ground voltage. A first inverter operates on the first power supply voltage and the first ground voltage to generate a first inverter output. The first inverter includes a first PMOS transistor having a drain coupled to a source of a blocking PMOS transistor and a first NMOS transistor having a drain coupled to a source of a blocking NMOS transistor. The level shifter further includes a second power supply voltage and a second ground voltage, and a second inverter coupled to the first inverter output and operates on the second power supply voltage and the second ground voltage. The blocking PMOS provides the required blocking on the event of the voltage spike in the second power supply voltage w.r.t the first power supply voltage and the blocking NMOS transistor provides the required blocking on the event of the voltage spike in the second ground voltage with respect to the first ground voltage.
Public/Granted literature
- US20130077196A1 ESD Robust Level Shifter Public/Granted day:2013-03-28
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