发明授权
US09155134B2 Methods and apparatus for rapidly responsive heat control in plasma processing devices
有权
等离子体处理装置中快速响应热控制的方法和装置
- 专利标题: Methods and apparatus for rapidly responsive heat control in plasma processing devices
- 专利标题(中): 等离子体处理装置中快速响应热控制的方法和装置
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申请号: US12253657申请日: 2008-10-17
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公开(公告)号: US09155134B2公开(公告)日: 2015-10-06
- 发明人: Chunlei Zhang , Richard Fovell , Ezra Robert Gold , Ajit Balakrishna , James P. Cruse
- 申请人: Chunlei Zhang , Richard Fovell , Ezra Robert Gold , Ajit Balakrishna , James P. Cruse
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser Taboada
- 代理商 Alan Taboada
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23F1/00 ; H01L21/306 ; H05B7/18 ; H01J37/32 ; H01L21/67
摘要:
Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.