Invention Grant
US09159554B2 Structure and method of forming metamorphic heteroepi materials and III-V channel structures on si
有权
在si上形成变质异质材料和III-V通道结构的结构和方法
- Patent Title: Structure and method of forming metamorphic heteroepi materials and III-V channel structures on si
- Patent Title (中): 在si上形成变质异质材料和III-V通道结构的结构和方法
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Application No.: US14262400Application Date: 2014-04-25
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Publication No.: US09159554B2Publication Date: 2015-10-13
- Inventor: Errol Antonio C. Sanchez , Xinyu Bao , Wonseok Lee , David Keith Carlson , Zhiyuan Ye
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/02 ; H01L21/762
Abstract:
Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A surface may be formed on a substrate and a Group III-V material may be grown from the surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure.
Public/Granted literature
- US20140329376A1 STRUCTURE AND METHOD OF FORMING METAMORPHIC HETEROEPI MATERIALS AND III-V CHANNEL STRUCTURES ON SI Public/Granted day:2014-11-06
Information query
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