-
公开(公告)号：US10410845B2
公开(公告)日：2019-09-10
申请号：US15821661
申请日：2017-11-22
Applicant: APPLIED MATERIALS, INC.
Inventor： Kenny Linh Doan , Usama Dadu , Wonseok Lee , Daisuke Shimizu , Li Ling , Kevin Choi
Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.
-
公开(公告)号：US09911579B2
公开(公告)日：2018-03-06
申请号：US14729736
申请日：2015-06-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Jason Della Rosa , Hamid Noorbakhsh , Vladimir Knyazik , Jisoo Kim , Wonseok Lee , Usama Dadu
IPC: H01J37/32
CPC classification number: H01J37/3244 , H01J37/32807 , H01J37/3288
Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.
-
公开(公告)号：US10607816B2
公开(公告)日：2020-03-31
申请号：US15909118
申请日：2018-03-01
Applicant: APPLIED MATERIALS, INC.
Inventor： Jason Della Rosa , Hamid Noorbakhsh , Vladimir Knyazik , Jisoo Kim , Wonseok Lee , Usama Dadu
Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.
-
公开(公告)号：US10395896B2
公开(公告)日：2019-08-27
申请号：US15449456
申请日：2017-03-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Wonseok Lee , Kartik Ramaswamy , Ankur Agarwal , Haitao Wang
IPC: H01J37/32 , H01L21/02 , H01L21/3213 , H01L21/683 , H01L21/67 , H01L21/3065
Abstract: Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (VHF) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more VHF sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more VHF sources to generate a VHF signal and the two or more low frequency sources to generate two or more low frequency signals.
-
公开(公告)号：US20180366359A1
公开(公告)日：2018-12-20
申请号：US15628396
申请日：2017-06-20
Applicant: Applied Materials, Inc.
Inventor： Haitao Wang , Wonseok Lee , Sergio Fukuda Shoji , Chunlei Zhang , Kartik Ramaswamy
IPC: H01L21/683 , H02N13/00 , H01L21/67
CPC classification number: H01L21/67259 , H01L21/6831 , Y10T29/49998 , Y10T279/23
Abstract: A method and apparatus for de-chucking a workpiece is described that uses a swing voltage sequence. One example pertains to a method that includes applying a mechanical force from an electrostatic chuck against the back side of a workpiece that is electrostatically clamped to the chuck, applying a sequence of voltage pulses with a same polarity to the electrodes, each pulse of the sequence having a lower voltage than the preceding pulse, each pulse of the sequence having a lower voltage than the preceding pulse, and determining whether the workpiece is released from the chuck after the sequence of additional voltage pulses and if the workpiece is not released then repeating applying the sequence of voltage pulses.
-
Patent Agency Ranking
公开(公告)号：US09872373B1
公开(公告)日：2018-01-16
申请号：US15415129
申请日：2017-01-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Daisuke Shimizu , Wonseok Lee , Katsumasa Kawasaki , Li Ling , Justin Phi , Kevin Choi
IPC: H05H1/46
CPC classification number: H05H1/46 , H01J37/32091 , H01J37/321 , H01J37/32128 , H01J37/32146 , H05H2001/4645
Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level, a second power level, and a third power level, providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level, a second power level, and a third power level, and processing the substrate using the first multi-level RF power waveform and the second multi-level RF power waveform to produce a features on the substrate have an aspect ratio of greater than 60:1 while maintaining an etch rate of greater than 170 nm/min.
-
公开(公告)号：US20190189481A1
公开(公告)日：2019-06-20
申请号：US16269484
申请日：2019-02-06
Applicant: Applied Materials, Inc.
Inventor： Haitao Wang , Wonseok Lee , Sergio Fukuda Shoji , Chunlei Zhang , Kartik Ramaswamy
IPC: H01L21/67 , H01L21/683
CPC classification number: H01L21/67259 , H01L21/67248 , H01L21/6831 , H01L21/6833 , Y10T29/49998 , Y10T279/23
Abstract: A method and apparatus for de-chucking a workpiece is described that uses a swing voltage sequence. One example pertains to a method that includes applying a mechanical force from an electrostatic chuck against the back side of a workpiece that is electrostatically clamped to the chuck, applying a sequence of voltage pulses with a same polarity to the electrodes, each pulse of the sequence having a lower voltage than the preceding pulse, each pulse of the sequence having a lower voltage than the preceding pulse, and determining whether the workpiece is released from the chuck after the sequence of additional voltage pulses and if the workpiece is not released then repeating applying the sequence of voltage pulses.
-
公开(公告)号：US10790120B2
公开(公告)日：2020-09-29
申请号：US16800285
申请日：2020-02-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Jason Della Rosa , Hamid Noorbakhsh , Vladimir Knyazik , Jisoo Kim , Wonseok Lee , Usama Dadu
Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.
-
公开(公告)号：US10784132B2
公开(公告)日：2020-09-22
申请号：US16269484
申请日：2019-02-06
Applicant: Applied Materials, Inc.
Inventor： Haitao Wang , Wonseok Lee , Sergio Fukuda Shoji , Chunlei Zhang , Kartik Ramaswamy
IPC: H01L21/67 , H01L21/683
Abstract: A method and apparatus for de-chucking a workpiece is described that uses a swing voltage sequence. One example pertains to a method that includes applying a mechanical force from an electrostatic chuck against the back side of a workpiece that is electrostatically clamped to the chuck, applying a sequence of voltage pulses with a same polarity to the electrodes, each pulse of the sequence having a lower voltage than the preceding pulse, each pulse of the sequence having a lower voltage than the preceding pulse, and determining whether the workpiece is released from the chuck after the sequence of additional voltage pulses and if the workpiece is not released then repeating applying the sequence of voltage pulses.
-
公开(公告)号：US10242893B2
公开(公告)日：2019-03-26
申请号：US15628396
申请日：2017-06-20
Applicant: Applied Materials, Inc.
Inventor： Haitao Wang , Wonseok Lee , Sergio Fukuda Shoji , Chunlei Zhang , Kartik Ramaswamy
IPC: H01L21/67 , H01L21/683
Abstract: A method and apparatus for de-chucking a workpiece is described that uses a swing voltage sequence. One example pertains to a method that includes applying a mechanical force from an electrostatic chuck against the back side of a workpiece that is electrostatically clamped to the chuck, applying a sequence of voltage pulses with a same polarity to the electrodes, each pulse of the sequence having a lower voltage than the preceding pulse, each pulse of the sequence having a lower voltage than the preceding pulse, and determining whether the workpiece is released from the chuck after the sequence of additional voltage pulses and if the workpiece is not released then repeating applying the sequence of voltage pulses.
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.013 seconds)
