Invention Grant
US09159572B2 Method of producing semiconductor substrate product, and etching method to be used therein
有权
半导体衬底产品的制造方法及其中使用的蚀刻方法
- Patent Title: Method of producing semiconductor substrate product, and etching method to be used therein
- Patent Title (中): 半导体衬底产品的制造方法及其中使用的蚀刻方法
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Application No.: US14316327Application Date: 2014-06-26
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Publication No.: US09159572B2Publication Date: 2015-10-13
- Inventor: Masashi Enokido , Tadashi Inaba , Atsushi Mizutani
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-286576 20111227
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/308 ; H01L49/02 ; H01L21/02 ; H01L21/3213 ; H01L27/108
Abstract:
A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.
Public/Granted literature
- US20140308819A1 METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND ETCHING METHOD TO BE USED THEREIN Public/Granted day:2014-10-16
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